Gadolinium Scandate: Next Candidate for Alternative Gate Dielectric in CMOS Technology?

The films of GdScO₃ were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600 °C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO₃/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000 °C. It is shown, that exact stoichiometry of GdScO₃ is not necessary to achieve dielectric constant above 20.