<abstract xmlns="http://www.w3.org/1999/xhtml">Thin films of Ge10–xSe60Te30Inx (x = 0, 2, 4 and 6) were developed by thermal evaporation technique. The annealing effect on the structural properties of Ge10–xSe60Te30Inx (x = 0, 2, 4 and 6) films has been studied by X-ray diffraction (XRD). The XRD results indicate amorphous nature of the as-prepared films whereas crystalline phases in annealed films were identified. Structural parameters such as average crystallite size, strain, and dislocation were determined for different annealing temperatures. Effect of annealing on optical constants of prepared films has been explored using UV-Vis spectrophotometer in the wavelength range of 400 nm to 1000 nm. Various optical constants were determined depending on annealing temperature. It has been noticed that the film transparency and optical bandgap Eg have been reduced whereas the absorption coefficient α and extinction coefficient k increased with increasing annealing temperature. It was found that the prepared samples obey the allowed direct transition. The reduction in optical bandgap with annealing temperature has been described by Mott and Davis model. Due to annealing dependence of the optical parameters, the investigated material could be utilized for phase change memory devices.</abstract>

Thin films of Ge10–xSe60Te30Inx (x = 0, 2, 4 and 6) were developed by thermal evaporation technique. The annealing effect on the structural properties of Ge10–xSe60Te30Inx (x = 0, 2, 4 and 6) films has been studied by X-ray diffraction (XRD). The XRD results indicate amorphous nature of the as-prepared films whereas crystalline phases in annealed films were identified. Structural parameters such as average crystallite size, strain, and dislocation were determined for different annealing temperatures. Effect of annealing on optical constants of prepared films has been explored using UV-Vis spectrophotometer in the wavelength range of 400 nm to 1000 nm. Various optical constants were determined depending on annealing temperature. It has been noticed that the film transparency and optical bandgap Eg have been reduced whereas the absorption coefficient α and extinction coefficient k increased with increasing annealing temperature. It was found that the prepared samples obey the allowed direct transition. The reduction in optical bandgap with annealing temperature has been described by Mott and Davis model. Due to annealing dependence of the optical parameters, the investigated material could be utilized for phase change memory devices.

Effect of thermal annealing on structural and optical properties of In doped Ge-Se-Te chalcogenide thin films

Madan Mohan Malaviya University of Technology

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Thin films of Ge10–xSe60Te30Inx (x = 0, 2, 4 and 6) were developed by thermal evaporation technique. The annealing effect on the structural properties of...

Effect of thermal annealing on structural and optical properties of In doped Ge-Se-Te chalcogenide thin films

Published Online: Dec 30, 2019

Page range: 554 - 562

Received: Feb 19, 2018

Accepted: Mar 01, 2019

DOI: https://doi.org/10.2478/msp-2019-0061

Keywords
chalcogenide glasses, phase transformation, thin films, DSC, optical band gap

© 2019 Pravin Kumar Singh et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Effect of thermal annealing on structural and optical properties of In doped Ge-Se-Te chalcogenide thin films

Published Online: Dec 30, 2019

Page range: 554 - 562

Received: Feb 19, 2018

Accepted: Mar 01, 2019

DOI: https://doi.org/10.2478/msp-2019-0061

Keywordschalcogenide glasses, phase transformation, thin films, DSC, optical band gap

© 2019 Pravin Kumar Singh et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Keywords
chalcogenide glasses, phase transformation, thin films, DSC, optical band gap