Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

[1]Hankare P.P., Chate P.A., Asabe M.R., Delekar S.D., Mulla I.S., Garadkar K.M., J. Mater. Sci.- Mater. El., 17 (2006), 1055.HankareP.P.ChateP.A.AsabeM.R.DelekarS.D.MullaI.S.GaradkarK.M.J. Mater. Sci.- Mater. El.172006105510.1007/s10854-006-9034-2Search in Google Scholar

[2]Nair P.S., Fritz K.P., Scholes G.D., Chem. Commun., 18 (2004), 2084.NairP.S.FritzK.P.ScholesG.D.Chem. Commun.182004208410.1039/b409972aSearch in Google Scholar

[3]Van De Walle C.G., Wide-Band-Gap Semiconductors, Amsterdam, North Holland, 1993.Van De WalleC.G.Wide-Band-Gap SemiconductorsAmsterdamNorth Holland1993Search in Google Scholar

[4]Brus L.E., J. Chem. Phys., 80 (1984), 4403.BrusL.E.J. Chem. Phys.801984440310.1063/1.447218Search in Google Scholar

[5]Yoshida T., J. Electrochem. Soc., 142 (1995), 3232.YoshidaT.J. Electrochem. Soc.1421995323210.1149/1.2048720Search in Google Scholar

[6]Vartanian A.L., Asatryan A., Kirakosyan L., Physica B, 389 (2007), 258.VartanianA.L.AsatryanA.KirakosyanL.Physica B389200725810.1016/j.physb.2006.06.160Search in Google Scholar

[7]Schreder B., Kukmmell T., Bacher G., Forchel A., Landwehr G., Materny A., Kiefer W.,J. Cryst. Growth, 214 (2000), 787.SchrederB.KukmmellT.BacherG.ForchelA.LandwehrG.MaternyA.KieferW.J. Cryst. Growth214200078710.1016/S0022-0248(00)00233-5Search in Google Scholar

[8]Trager-Cowan C., Bagnall D.M., Mcgow F., Mccallum W., O’Donnell K.P., Smith P.C., Wright P.J., Cockayne B., Prior K.A., Mullins J.T., Horsburgh G., Cavenett B.C., J. Cryst. Growth, 159 (1996), 618.Trager-CowanC.BagnallD.M.McgowF.MccallumW.O’DonnellK.P.SmithP.C.WrightP.J.CockayneB.PriorK.A.MullinsJ.T.HorsburghG.CavenettB.C.J. Cryst. Growth159199661810.1016/0022-0248(95)00725-3Search in Google Scholar

[9]Kale R.B., Lokhande C.D., Mane R.S., Han S.H., Appl. Surf. Sci., 253 (2007), 3109.KaleR.B.LokhandeC.D.ManeR.S.HanS.H.Appl. Surf. Sci.2532007310910.1016/j.apsusc.2006.06.064Search in Google Scholar

[10]Samarth N., Luo H., Furdyna J.K., Alonso R.G., Lee Y.R., Ramdas A.K., Qadri S.B., Otsuka N., Appl. Phys. Lett., 56 (1990), 1163.SamarthN.LuoH.FurdynaJ.K.AlonsoR.G.LeeY.R.RamdasA.K.QadriS.B.OtsukaN.Appl. Phys. Lett.561990116310.1063/1.102550Search in Google Scholar

[11]Sutrave D.S., Shahane G.S., Patil V.B., Deshmukh L.P., Mater. Chem. Phys., 65 (2000), 298.SutraveD.S.ShahaneG.S.PatilV.B.DeshmukhL.P.Mater. Chem. Phys.65200029810.1016/S0254-0584(00)00240-6Search in Google Scholar

[12]Kishore V., Saraswat V.K., Saxena N.S., Sharma T.P., B. Mater. Sci., 28 (2005), 431.KishoreV.SaraswatV.K.SaxenaN.S.SharmaT.P.B. Mater. Sci.28200543110.1007/BF02711232Search in Google Scholar

[13]Mahmood A., Shaista R., Shah A., Aziz U., Ahmed E., Ali S., Raza Q., Phys. Scr, 83 (2011).MahmoodA.ShaistaR.ShahA.AzizU.AhmedE.AliS.RazaQ.Phys. Scr83201110.1088/0031-8949/83/06/065706Search in Google Scholar

[14]Naser M. A., Sauli Z., Hashim U., Al-Douri Y., Int. J. Nanoelectron. Mater., 2 (2009), 189.NaserM. A.SauliZ.HashimU.Al-DouriY.Int. J. Nanoelectron. Mater.22009189Search in Google Scholar

[15]Ezema F.I., Turk. J. Phys., 29 (2005), 105.EzemaF.I.Turk. J. Phys.29200510510.1097/00000446-200507000-00022Search in Google Scholar

[16]Pankove J.I., Optical Processes in Semiconductors, Dover Publications, New York, 1976.PankoveJ.I.Optical Processes in SemiconductorsDover PublicationsNew York1976Search in Google Scholar

[17]Gaewdang NG., Gaewdang T., Mater. Lett., 59 (2005), 3577.GaewdangNG.GaewdangT.Mater. Lett.592005357710.1016/j.matlet.2005.06.031Search in Google Scholar

[18]Zakria M., Mahmood A., Shah A., Raza Q., Khan T.M., Ahmed E., Prog. Nat. Sci.-Mater., 22 (2012), 281.ZakriaM.MahmoodA.ShahA.RazaQ.KhanT.M.AhmedE.Prog. Nat. Sci.-Mater.22201228110.1016/j.pnsc.2012.07.006Search in Google Scholar

[19]Bassani G.F., Parravicini G.P., Electronic States and Optical Transitions in Solids, Ergamon Press, Oxford, 1989.BassaniG.F.ParraviciniG.P.Electronic States and Optical Transitions in SolidsErgamon PressOxford1989Search in Google Scholar

[20]Hannachi L., Bouarissa N., Physica B, 404 (2009), 3650.HannachiL.BouarissaN.Physica B4042009365010.1016/j.physb.2009.06.046Search in Google Scholar

[21]Bouarissa N., Physica B, 399 (2007), 126.BouarissaN.Physica B399200712610.1016/j.physb.2007.05.034Search in Google Scholar

[22]Di Domenico M., Wemple S.H., J. Appl. Phys., 40 (1969), 720.Di DomenicoM.WempleS.H.J. Appl. Phys.40196972010.1063/1.1657458Search in Google Scholar

[23]Prabakar K., Venkatachalam S., Jeyachandran Y.L., Narayandass S.K., Mangalaraj D., Sol. Energ. Mat. Sol. C., 81 (2004), 1.PrabakarK.VenkatachalamS.JeyachandranY.L.NarayandassS.K.MangalarajD.Sol. Energ. Mat. Sol. C.812004110.1016/j.solmat.2003.08.008Search in Google Scholar