Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy

In this work, the quantities have been determined experimentally that are needed for reliable and precise quantitative interpretation of Auger spectra of nitrides AlN, GaN and of their ternary alloys Al_xGa_{1 - x}N. Measurements of reference samples AlN and GaN under various parameters of the primary electron beam (energy 3 and 5 keV, beam incidence angle with respect to the surface normal 12.5° and 45°) and of the ion beam (energy 0.5 and 1.0 keV, beam incidence angle with respect to the surface normal 67.5° and 35°) allowed to find the elemental sensitivity factors for these nitrides, and measurements on reference samples of ternary alloys Al_xGa_{1 - x}N allowed to find the component sputtering yields Y_Ga/Y_Al. To the best of our knowledge there is a lack of such data for those materials in the literature.