<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">In this work, the quantities have been determined experimentally that are needed for reliable and precise quantitative interpretation of Auger spectra of nitrides AlN, GaN and of their ternary alloys Al<italic>x</italic>Ga1 - <italic>x</italic>N. Measurements of reference samples AlN and GaN under various parameters of the primary electron beam (energy 3 and 5 keV, beam incidence angle with respect to the surface normal 12.5° and 45°) and of the ion beam (energy 0.5 and 1.0 keV, beam incidence angle with respect to the surface normal 67.5° and 35°) allowed to find the elemental sensitivity factors for these nitrides, and measurements on reference samples of ternary alloys Al<italic>x</italic>Ga1 - <italic>x</italic>N allowed to find the component sputtering yields <italic>Y</italic>Ga/<italic>Y</italic>Al. To the best of our knowledge there is a lack of such data for those materials in the literature.</abstract>

In this work, the quantities have been determined experimentally that are needed for reliable and precise quantitative interpretation of Auger spectra of nitrides AlN, GaN and of their ternary alloys AlxGa1 - xN. Measurements of reference samples AlN and GaN under various parameters of the primary electron beam (energy 3 and 5 keV, beam incidence angle with respect to the surface normal 12.5° and 45°) and of the ion beam (energy 0.5 and 1.0 keV, beam incidence angle with respect to the surface normal 67.5° and 35°) allowed to find the elemental sensitivity factors for these nitrides, and measurements on reference samples of ternary alloys AlxGa1 - xN allowed to find the component sputtering yields YGa/YAl. To the best of our knowledge there is a lack of such data for those materials in the literature.

Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy

Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

Centre for Micro- and Nanotechnologies, Technical University of Ilmenau, Gustav Kirchhoff-Str. 7, D-98693 Ilmenau, Germany

Journal of Electrical Engineering

In this work, the quantities have been determined experimentally that are needed for reliable and precise quantitative interpretation of Auger spectra of...

Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy

Data publikacji: 21 gru 2011

Zakres stron: 367 - 369

DOI: https://doi.org/10.2478/v10187-011-0059-2

Słowa kluczowe
GaN, AlN, AlGaN, AES relative elemental sensitivity factors, component sputtering yields

This content is open access.

Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy

Data publikacji: 21 gru 2011

Zakres stron: 367 - 369

DOI: https://doi.org/10.2478/v10187-011-0059-2

Słowa kluczoweGaN, AlN, AlGaN, AES relative elemental sensitivity factors, component sputtering yields

This content is open access.

Słowa kluczowe
GaN, AlN, AlGaN, AES relative elemental sensitivity factors, component sputtering yields