Electronic structures of Hg-doped anatase TiO2 with different O vacancy concentrations
, , , , , , oraz | 26 mar 2014
O artykule
Data publikacji: 26 mar 2014
Zakres stron: 93 - 97
DOI: https://doi.org/10.2478/s13536-013-0162-0
Słowa kluczowe
© 2014 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
S. Zheng
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Guohao Wu
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Suoliang Zhang
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Jie Su
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Lei Liu
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Fang Wang
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Rui Zhao
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Xiaobing Yan
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China