Open Access

Electronic structures of Hg-doped anatase TiO2 with different O vacancy concentrations


Cite

S. Zheng
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Guohao Wu
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Suoliang Zhang
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Jie Su
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Lei Liu
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Fang Wang
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Rui Zhao
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
Xiaobing Yan
Research Center for Computational Materials & Device Simulations, College of Electronic & Informational Engineering, Hebei University, Baoding, 071002, P.R. China
eISSN:
2083-124X
ISSN:
2083-1331
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties