Thermal conductivity of silicon doped by phosphorus: ab initio study

[1] LIDOW A., STRYDOM J., ROOIJ DE M., REUSCH D., GaN Transistors for Efficient Power Conversion, Wiley, 2015.10.1002/9781118844779Search in Google Scholar

[2] BORGES R., Gallium nitride electronic devices for highpower wireless applications, Application Notes, RF Design, 2001, p. 72.Search in Google Scholar

[3] BERNARDONI M., DELMONTE N., MENOZZI R., CS Mantech Conference, Boston, USA, April 23 - 26, 2012.Search in Google Scholar

[4] PEREZ J.A.F., Thermal Study of a GaN-Based HEMT, PhD Dissertation, University of Notre Dame Indiana, 2012.Search in Google Scholar

[5] VISALLI D., Optimization of GaN-on-Si HEMTs for High Voltage Applications, PhD Dissertation, Katholieke Universiteit Leuven, 2011.Search in Google Scholar

[6] FORNETTI F., Characterisation and Performance Optimisation of GaN HEMTs and Amplifiers for Radar Applications, PhD Dissertation, University of Bristol, 2010.Search in Google Scholar

[7] MACFARLANE D.J., Design and fabrication of Al- GaN/GaN HEMTs with high breakdown voltages, PhD Dissertation, School of Engineering, University of Glasgow, 2014.Search in Google Scholar

[8] VITANOV S., PALANKOVSKI V., MAROLDT S., QUAY R., Solid-State Electron., 54 (2010), 1105.10.1016/j.sse.2010.05.026Search in Google Scholar

[9] STACKHOUSE S., STIXRUDE L., Rev. Mineral. Geochem., 71 (2010), 253.10.2138/rmg.2010.71.12Search in Google Scholar

[10] GREEN M.S., J. Chem. Phys., 22 (1954), 398.10.1063/1.1740082Search in Google Scholar

[11] KUBO R., J. Phys. Soc. Japan, 12 (1957), 570.10.1143/JPSJ.12.570Open DOISearch in Google Scholar

[12] KUBO R., Rep. Prog. Phys., 29 (1966), 255.10.1088/0034-4885/29/1/306Open DOISearch in Google Scholar

[13] MULLERPLATHE F.J., Chem. Phys., 106 (1997), 6082.10.1063/1.473271Search in Google Scholar

[14] ZIMAN J.M., Electrons and Phonons, Oxford University Press, 2001.10.1093/acprof:oso/9780198507796.001.0001Search in Google Scholar

[15] KRESSE G., JOUBERT D., Phys. Rev. B, 59 (1999), 1758.10.1103/PhysRevB.59.1758Search in Google Scholar

[16] BLÖCHL P.E., Phys. Rev. B, 50 (1994), 17953.10.1103/PhysRevB.50.179539976227Open DOISearch in Google Scholar

[17] RÓG T., MURZYN K., HINSEN K., KNELLER G.R., J. Comput. Chem., 24 (2003), 657.10.1002/jcc.10243Search in Google Scholar

[18] KAERGER J., GRINBERG F., HEITJANS P., Diffusion fundamentals, Leipzig University, 2005.Search in Google Scholar

[19] ROHLF J.W., Modern Physics from A to Z, John Wiley & Sons Inc, 1994.Search in Google Scholar

[20] BLATT F.J., Modern Physics, McGraw-Hill, New York, 1992.Search in Google Scholar

[21] KLEMENS P.G., GELL M., Mat. Sci. Eng. A, 245 (1998), 143.10.1016/S0921-5093(97)00846-0Search in Google Scholar

[22] TAMURA S., SHIELDS J.A., WOLFE J.P., Phys. Rev. B, 44 (1991), 3001.10.1103/PhysRevB.44.3001Open DOISearch in Google Scholar

[23] NIKANOROV S.P., BURENKOV YU.A., STEPANOV A.V., Sov. Phys. Solid State, 13 (1971), 2516.Search in Google Scholar

[24] OKHOTIN A.S., PUSHKARSKII A.S., GORBACHEV V.V., Thermophysical Properties of Semiconductors, "Atom" Publ. House, 1972. (in Russian).Search in Google Scholar

[25] DESAL P.D., J. Phys. Chem. Ref. Data, 15 (1986), 967.10.1063/1.555761Search in Google Scholar

[26] SHANKS H.R., MAYCOCK P.D., SIDLES P.H., DANIELSON G.C., Phys. Rev., 130 5 (1963), 1743.10.1103/PhysRev.130.1743Search in Google Scholar

[27] GLASSBRENNER C.J., SLACK G.A., Phys. Rev., 134 (1964), A1058.10.1103/PhysRev.134.A1058Search in Google Scholar

[28] LEE Y., HWANG G.S., Phys. Rev. B, 86 (2012), 075202.10.1103/PhysRevB.86.075202Search in Google Scholar

[29] ASHEGHI M., KURAB K., KASNAVI R., GOODSON K.E., J. Appl. Phys., 91 (2002), 5079.10.1063/1.1458057Open DOISearch in Google Scholar

[30] JIN J.S., J. Mechan. Sci.Technol., 28 (2014), 2287.10.1007/s12206-014-0518-3Search in Google Scholar

[31] XIEL J., LEE C., WANG M.-F., LIU Y., FENG H., J. Micromech. Microeng., 19 (2009), 125029.10.1088/0960-1317/19/12/125029Search in Google Scholar