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Fig. 1
Dashed line: supplied sine current source, solid line: supplied sine voltage source, f = 30Hz, (a) Maximal state change xmax dependent on x0, Δt=T2,$\Delta t=\frac{T}{2},$(b) M(x) as a function of t for two different initial states and two source types.
Fig. 2
Schematic of the memristor bridge circuit.
Fig. 3
Voltage VRL as a function of time t, sine AC voltage source, V0 = 30V, xn(t = 0) = 0.5, (a) f = 0.5Hz, (b) f = 30Hz.
Fig. 4
Memristances M1 and M3 dependent on time t, sine AC voltage source, V0 = 30V, xn(t = 0) = 0.5, (a) f = 0.5Hz, (b) f = 30Hz.
Fig. 5
Approximate circuit equivalents: (a) Graetz circuit for very low frequencies, (b) Wheatstone circuit for very high frequencies.
Fig. 6
VRL dependent on t, supplied periodic square wave voltage source, V0 = 10V, xn(t = 0) = 0.5, (a) f = 0.5Hz, (b) f = 30Hz.
Fig. 7
System supplied by a periodic square wave voltage source with V0 = 10V, f = 30Hz, x1(0) = x4(0) = 0.5+e, x2(0) = x3(0) = 0.5−e. (a) M1(x) and M3(x) as a function of t for different initial conditions, (b) VRL dependent on t for different initial conditions.
Fig. 8
Output voltage of the memristor bridge dependent on time. Input voltage is a synaptic impulse as shown in Fig. 7 with e = 0.23. Initial states of this cell: (a) e = 0, (b) e = 0.23.
Fig. 9
Three neurons, N1 and N2 are activated, N3 is not activated (e = 0).
Fig. 10
Schematic diagram of the voltage curves.
Fig. 11
System excited by theta waves: periodic square wave voltage source with V0 = 10V, f = 7Hz, x1(0) = x4(0) = 0.5+e, x2(0) = x3(0) = 0.5−e. (a) M1(x) and M3(x) dependent on t for different initial conditions, (b) VRL dependent on t for different initial conditions.
Fig. 12
Schematic of two combined cells.
Fig. 13
Schematic of a presynaptic neuron which is connected to several postsynaptic neurons.
Fig. 14
VRL dependent on time t, analytical and numerical solution.
Fig. 15
Schematic of the circuit with two memristors.
Fig. 16
Implementation of the HP memristor in Matlab Simulink
