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Journal of Electrical Engineering
Volume 63 (2012): Issue 5 (September 2012)
Open Access
Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties
Jozef Huran
Jozef Huran
,
Albín Valovič
Albín Valovič
,
Michal Kučera
Michal Kučera
,
Angela Kleinová
Angela Kleinová
,
Eva Kovačcová
Eva Kovačcová
,
Pavol Boháček
Pavol Boháček
and
Mária Sekáčová
Mária Sekáčová
| Nov 20, 2012
Journal of Electrical Engineering
Volume 63 (2012): Issue 5 (September 2012)
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Published Online:
Nov 20, 2012
Page range:
333 - 335
DOI:
https://doi.org/10.2478/v10187-012-0049-z
Keywords
hydrogenated amorphous silicon carbon nitride
,
PECVD
This content is open access.
Jozef Huran
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Albín Valovič
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Michal Kučera
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Angela Kleinová
Polymer Institute, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 84541 Bratislava, Slovakia
Eva Kovačcová
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Pavol Boháček
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Mária Sekáčová
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia