<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized silicon substrates. The influence of the oxygen flow in the reactive mixture and post-deposition annealing on the structural properties were investigated. The as deposited In2O3 films showed a dominating randomly oriented nanocrystalline structure of cubic In2O3. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films.</abstract>

The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized silicon substrates. The influence of the oxygen flow in the reactive mixture and post-deposition annealing on the structural properties were investigated. The as deposited In2O3 films showed a dominating randomly oriented nanocrystalline structure of cubic In2O3. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films.

Structural Evolution of Sputtered Indium Oxide Thin Films

Department of Microelectronics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

FG Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik, TU Ilmeau, Postfach 100565, 98684 Ilmenau, Germany

Department of Geology of Mineral Deposits, Comenius University, Mlynská dolina, 842 15 Bratislava

Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria

Journal of Electrical Engineering

{"article-title":"Structural Evolution of Sputtered Indium Oxide Thin Films"}

The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized...

Structural Evolution of Sputtered Indium Oxide Thin Films

Published Online: Jun 07, 2011

Page range: 382 - 385

DOI: https://doi.org/10.2478/v10187-010-0059-7

Keywords
InO thin films, dc magnetron sputtering, structure, cubic indium oxide, rhombohedral indium oxide

This content is open access.

Structural Evolution of Sputtered Indium Oxide Thin Films

Published Online: Jun 07, 2011

Page range: 382 - 385

DOI: https://doi.org/10.2478/v10187-010-0059-7

KeywordsInO thin films, dc magnetron sputtering, structure, cubic indium oxide, rhombohedral indium oxide

This content is open access.

Keywords
InO thin films, dc magnetron sputtering, structure, cubic indium oxide, rhombohedral indium oxide