[MURAKAMI, M.—KOIDE, Y.: Critical Reviews in Solid State and Materials Sciences 23 (1998), 1.10.1080/10408439891324167]Search in Google Scholar
[HO, J. K.—JONG, C. S.—CHIU, C. C.—HUANG, C. N.—CHEN, C. Y.—SHIH, K. K.: Appl. Phys. Lett. 74 (1999), 1275.10.1063/1.123546]Search in Google Scholar
[HO, J. K.—JONG, C. S.—CHIU, C. C.—HUANG, C. N.—SHIH, K. K.—CHEN, L. C.—CHEN, F. R.—KAI, J. J.: J. Appl. Phys. 86 (1999), 4491.10.1063/1.371392]Search in Google Scholar
[MAED, A. T.—KOIDE, Y.—MURAKAMI, M.: Appl. Phys. Lett. 75 (1999), 4145.10.1063/1.125564]Search in Google Scholar
[MISTELE, D.—FEDLER, F.—KLAUSING, H.—ROTTER, T.—STEMMER, J.—SEMCHINOVA, O. K.—ADERHOLD, J.: J. Cryst. Growth 230 (2001), 564.10.1016/S0022-0248(01)01250-7]Search in Google Scholar
[CHEN, L. C.—HO, J. K.—JONG, C. S.—CHIU, C. C.—SHIH, K. K.—CHEN, F. R.—KAI, J. J.—CHANG, L.: J. Appl. Phys. 76 (2000)), 3703.10.1063/1.126755]Search in Google Scholar
[JANG, H. W.—KIM, S. Y.—LEE, J. L.: J. Appl. Phys. 94 (2003), 1748.10.1063/1.1586983]Search in Google Scholar
[EENZEL, R.—FISCHER, G. G.—SCHMID-FETZER, R.: Mater. Sci. Semicond. Process. 0 (2000), 1.]Search in Google Scholar
[PARK, M. R.—SONG, Y. J.—ANDERSON, W. A.: ETRI Journ. 24 (2002), 349.10.4218/etrij.02.0102.0503]Search in Google Scholar
[NARAYAN, J.—WANG, H.—OH, T. H.—CHOI, H. K.—FAN, J. C. C.: Appl. Phys. Lett. 81 (2002), 3978.10.1063/1.1524032]Search in Google Scholar
[WANG, S. H.—MOHNEY, S. E.—BIRKHAHN, R.: J. Appl. Phys. 91 (2002), 3711.10.1063/1.1448885]Search in Google Scholar
[SONG, J. O.—LEEM, D. S.—SEONG, T. Y.: Appl. Phys. Lett. 83 (2004), 3513.10.1063/1.1622984]Search in Google Scholar
[SONG, J. O.—LEEM, D. S.—SEONG, T. Y.: Appl. Phys. Lett. 84 (2004), 4663.10.1063/1.1759774]Search in Google Scholar
[LIDAY, J.—HOTOVÝ, I.—SITTER, H.—SCHMIDEGG, K. VOGRINČIČ, P.—BONANNI, A.—BREZA, J.—ECKE, G. VÁVRA, I.: Appl. Surf. Sci. 253 (2007), 3174.10.1016/j.apsusc.2006.07.011]Search in Google Scholar