Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

[1] Amano H., Kito M., Hiramatsu K., Akasak I., Jpn. J. Appl. Phys., 28 (1989), 1705. http://dx.doi.org/10.1143/JJAP.28.L211210.1143/JJAP.28.L2112Search in Google Scholar

[2] Nakamura S., Mukai T., Senoh M., Appl. Phys. Lett., 64 (1994), 1687. http://dx.doi.org/10.1063/1.11183210.1063/1.111832Search in Google Scholar

[3] Ferguson I., Tran C.A., Karlicek R.F., Feng Z.C., Stall R., Liang S., Mater. Sci. Eng., 50 (1997), 311. http://dx.doi.org/10.1016/S0921-5107(97)00196-710.1016/S0921-5107(97)00196-7Search in Google Scholar

[4] Walker D. et al, Appl. Phys. Lett., 68 (1996), 2100. http://dx.doi.org/10.1063/1.11559710.1063/1.115597Search in Google Scholar

[5] Schmitz A.C., Ping A.T., Khan M.A., Chen Q., Yang J.W., Adesida I., J. Electron. Mat., 27 (1998), 255. http://dx.doi.org/10.1007/s11664-998-0396-510.1007/s11664-998-0396-5Search in Google Scholar

[6] Macherzyński W., TłACZAłA M., Elektronika, 7 (2007), 37. Search in Google Scholar

[7] Schroder D.K., Semiconductor material and device characterization, third edition, John Wiley & Sons, New Jersey, 2006. 10.1002/0471749095Search in Google Scholar

[8] Ibbetson J.P., Fini P.T., Ness K.D., Denbaars S.P., Speck J.S., Mishra U.K., Appl. Phys. Lett., 77 (2000), 250. http://dx.doi.org/10.1063/1.12694010.1063/1.126940Search in Google Scholar

[9] Macherzynski W. et al., Optica Applicata, XIXXX, (2009), 673. Search in Google Scholar