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Journals
Materials Science-Poland
Volume 30 (2012): Issue 4 (December 2012)
Open Access
Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures
W. Macherzyński
W. Macherzyński
,
B. Paszkiewicz
B. Paszkiewicz
,
A. Vincze
A. Vincze
,
R. Paszkiewicz
R. Paszkiewicz
,
M. Tłaczała
M. Tłaczała
and
J. Kováč
J. Kováč
| Dec 14, 2012
Materials Science-Poland
Volume 30 (2012): Issue 4 (December 2012)
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Published Online:
Dec 14, 2012
Page range:
342 - 347
DOI:
https://doi.org/10.2478/s13536-012-0051-y
Keywords
ohmic contact
,
AlGaN/GaN heterostructure
,
2-dimensional electron gas (2DEG)
© 2012 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
W. Macherzyński
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego Street, 50-372, Wroclaw, Poland
B. Paszkiewicz
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego Street, 50-372, Wroclaw, Poland
A. Vincze
R. Paszkiewicz
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego Street, 50-372, Wroclaw, Poland
M. Tłaczała
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego Street, 50-372, Wroclaw, Poland
J. Kováč
Institute of Electronics and Photonics, FEI STU, Ilkovicova 3, 812 19, Bratislava, Slovakia