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Journal of Electrical Engineering
Volume 70 (2019): Issue 7 (December 2019)
Open Access
Black silicon – correlation between microstructure and Raman scattering
Stanislav Jurečka
Stanislav Jurečka
,
Emil Pinčík
Emil Pinčík
,
Kentaro Imamura
Kentaro Imamura
,
Taketoshi Matsumoto
Taketoshi Matsumoto
and
Hikaru Kobayashi
Hikaru Kobayashi
| Sep 28, 2019
Journal of Electrical Engineering
Volume 70 (2019): Issue 7 (December 2019)
Special Issue
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Published Online:
Sep 28, 2019
Page range:
58 - 64
Received:
Mar 19, 2019
DOI:
https://doi.org/10.2478/jee-2019-0042
Keywords
black silicon
,
TEM
,
roughness
,
fractal properties
,
Raman scattering
© 2019 Stanislav Jurečka et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Stanislav Jurečka
Institute of Aurel Stodola, University of Žilina
Liptovský Mikuláš, Slovakia
Emil Pinčík
Institute of Physics SAS,
Bratislava, Slovakia
Kentaro Imamura
The Institute of Scientific and Industrial Research, Osaka University
Osaka, Japan
Taketoshi Matsumoto
The Institute of Scientific and Industrial Research, Osaka University
Osaka, Japan
Hikaru Kobayashi
The Institute of Scientific and Industrial Research, Osaka University
Osaka, Japan