<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Due to their properties, carbon nanotubes and reduced graphene oxide are highly promising materials for obtaining low-resistance ohmic contacts to p-GaN with good optical transparency for visible light. In this contribution we designed a combination of these two materials, along with a cap layer, to be used as structures for ohmic contacts to p-GaN. Carbon nanotube (CNT) and graphene oxide (GO) layers were deposited by spray coating using an off-the-shelf airbrush on p-GaN layers. The metallic layers of Au/Pd were vapour deposited. The structures for ohmic contacts were prepared in two configurations, namely as Au/Pd/r-GO/CNT/p-GaN and Au/Pd/CNT/r-GO/CNT/p-GaN. The prepared structures provide a low resistivity ohmic contact after subsequent annealing in air ambient at 600 °C for 3 minutes. The contact containing the sandwich CNT/r-GO/CNT interstructure exhibits lower values of contact resistance in comparison with the r-GO/CNT interstructure.</p></abstract>

Due to their properties, carbon nanotubes and reduced graphene oxide are highly promising materials for obtaining low-resistance ohmic contacts to p-GaN with good optical transparency for visible light. In this contribution we designed a combination of these two materials, along with a cap layer, to be used as structures for ohmic contacts to p-GaN. Carbon nanotube (CNT) and graphene oxide (GO) layers were deposited by spray coating using an off-the-shelf airbrush on p-GaN layers. The metallic layers of Au/Pd were vapour deposited. The structures for ohmic contacts were prepared in two configurations, namely as Au/Pd/r-GO/CNT/p-GaN and Au/Pd/CNT/r-GO/CNT/p-GaN. The prepared structures provide a low resistivity ohmic contact after subsequent annealing in air ambient at 600 °C for 3 minutes. The contact containing the sandwich CNT/r-GO/CNT interstructure exhibits lower values of contact resistance in comparison with the r-GO/CNT interstructure.

Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN

Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

Danubia NanoTech, s.r.o., Ilkovičova 3, 841 04 Bratislava, Slovakia

STU Centre for Nanodiagnostics, Slovak University of Technology, Vazovova 5, 812 43 Bratislava, Slovakia

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Due to their properties, carbon nanotubes and reduced graphene oxide are highly promising materials for obtaining low-resistance ohmic contacts to p-GaN with...

Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN

Published Online: Dec 05, 2015

Page range: 344 - 347

Received: Jul 24, 2015

DOI: https://doi.org/10.2478/jee-2015-0057

Keywords
p-GaN, ohmic contacts, carbon nanotubes, graphene, reduced graphene oxide (r-GO)

© 2015 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN

Published Online: Dec 05, 2015

Page range: 344 - 347

Received: Jul 24, 2015

DOI: https://doi.org/10.2478/jee-2015-0057

Keywordsp-GaN, ohmic contacts, carbon nanotubes, graphene, reduced graphene oxide (r-GO)

© 2015 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Keywords
p-GaN, ohmic contacts, carbon nanotubes, graphene, reduced graphene oxide (r-GO)