Open Access

Effect of electron beam injection on boron redistribution in silicon and oxide layer


Cite

Delannoy Y., J. Cryst. Growth, 360 (2012), 61.DelannoyY.J. Cryst. Growth36020126110.1016/j.jcrysgro.2011.12.006Search in Google Scholar

Martorano M.A., Ferreira Neto J.B., Oliveira T.S., Tsubaki T.O., Mater. Sci. Eng. B-Adv., 176 (2011), 217.MartoranoM.A.Ferreira NetoJ.B.OliveiraT.S.TsubakiT.O.Mater. Sci. Eng. B-Adv.176201121710.1016/j.mseb.2010.11.010Search in Google Scholar

Jiang D.C., Tan Y., Shi S., Dong W., Gu Z., Zou R.X., Mater. Lett., 78 (2012), 4.JiangD.C.TanY.ShiS.DongW.GuZ.ZouR.X.Mater. Lett.782012410.1016/j.matlet.2012.03.031Search in Google Scholar

Kemmotsu T., Nagai T., Maeda M., High Temp. Mat. Pr.-Isr., 30 (2011), 17.KemmotsuT.NagaiT.MaedaM.High Temp. Mat. Pr.-Isr.3020111710.1515/htmp.2011.002Search in Google Scholar

Wu J.J., Li Y.L., Ma W.H., Liu K., Wei K.X., Xie K.Q., Yang B., Dai Y.N., Silicon-Neth., 6 (2014), 79.WuJ.J.LiY.L.MaW.H.LiuK.WeiK.X.XieK.Q.YangB.DaiY.N.Silicon-Neth620147910.1007/s12633-013-9158-ySearch in Google Scholar

Nakamura N., Baba H., Sakaguchi Y., J. Jpn. I. Met., 67 (2003), 583.NakamuraN.BabaH.SakaguchiY.J. Jpn. I. Met.67200358310.2320/jinstmet1952.67.10_583Search in Google Scholar

Zhang L., Tan Y., Xu F.M., Li J.Y., Wang H.Y., Gu Z., Sep. Sci. Technol., 48 (7) (2013), 1140.ZhangL.TanY.XuF.M.LiJ.Y.WangH.Y.GuZ.Sep. Sci. Technol.4872013114010.1080/01496395.2012.714438Search in Google Scholar

Yoshikawa T., Morita K., Metall. Mater. Trans. B, 36 (2005), 731.YoshikawaT.MoritaK.Metall. Mater. Trans. B36200573110.1007/s11663-005-0076-2Search in Google Scholar

Abadli S., Mansour F., Bedel Pereira E., Cryst. Res. Technol., 47 (10) (2012), 1047.AbadliS.MansourF.Bedel PereiraE.Cryst. Res. Technol.47102012104710.1002/crat.201200199Search in Google Scholar

Aoyama T., Suzuki K., Toda Y., Yamazaki T., Takashi K., Ito T., J. Appl. Phys., 77 (1995), 417.AoyamaT.SuzukiK.TodaY.YamazakiT.TakashiK.ItoT.J. Appl. Phys.77199541710.1063/1.359343Search in Google Scholar

Grove A.S., Leistiko O., Sah C.T., J. Appl. Phys., 35 (1964), 2695.GroveA.S.LeistikoO.SahC.T.J. Appl. Phys.351964269510.1063/1.1713825Search in Google Scholar

Fair R.B., J. Electrochem. Soc., 144 (1997), 709.FairR.B.J. Electrochem. Soc.144199770910.1149/1.1837473Search in Google Scholar

Li W.Q., Zhang H.B., Acta Phys. Sin.-Ch. Ed., 57 (2008), 3219.LiW.Q.ZhangH.B.Acta Phys. Sin.-Ch. Ed.572008321910.7498/aps.57.3219Search in Google Scholar

Tan Y., Qin S.Q., Wen S.T., Li J.Y., Shi S., Jiang D.C., Pang D.Y., Mat. Sci. Semicon. Proc., 18 (2014), 42.TanY.QinS.Q.WenS.T.LiJ.Y.ShiS.JiangD.C.PangD.Y.Mat. Sci. Semicon. Proc.1820144210.1016/j.mssp.2013.10.006Search in Google Scholar

Suzuki K., Miyashita T., IEEE T. Electron Dev., 47 (2000), 524.SuzukiK.MiyashitaT.IEEE T. Electron Dev.47200052410.1109/16.824721Search in Google Scholar

Ohsawa A., Honda K., Toyokura N., J. Electrochem. Soc., 131 (1984), 2968.OhsawaA.HondaK.ToyokuraN.J. Electrochem. Soc.1311984296810.1149/1.2115451Search in Google Scholar

Wolf H.F., Silicon Semiconductor Data, Pergamon, London, 1969.WolfH.F.Silicon Semiconductor DataPergamonLondon1969Search in Google Scholar

Baierle R.J., Caldas M.J., Dabrowski J., Mussig H.J., Zavodinsky V., Physica B, 273 (1999), 260.BaierleR.J.CaldasM.J.DabrowskiJ.MussigH.J.ZavodinskyV.Physica B273199926010.1016/S0921-4526(99)00477-9Search in Google Scholar

eISSN:
2083-134X
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties