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Materials Science-Poland
Volume 35 (2017): Issue 1 (March 2017)
Open Access
Effect of electron beam injection on boron redistribution in silicon and oxide layer
Shiqiang Qin
Shiqiang Qin
,
Yi Tan
Yi Tan
,
Jiayan Li
Jiayan Li
,
Dachuan Jiang
Dachuan Jiang
,
Shutao Wen
Shutao Wen
and
Shuang Shi
Shuang Shi
| Feb 24, 2017
Materials Science-Poland
Volume 35 (2017): Issue 1 (March 2017)
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Published Online:
Feb 24, 2017
Page range:
14 - 17
Received:
Feb 29, 2016
Accepted:
Jan 15, 2017
DOI:
https://doi.org/10.1515/msp-2017-0027
Keywords
electron beam injection
,
silicon
,
solar energy materials
,
boron
,
oxidation
© 2017 Shiqiang Qin, Yi Tan, Jiayan Li, Dachuan Jiang, Shutao Wen, Shuang Shi
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
SEM images and XRD patterns of the samples: (a) surface of the oxide layer before EBI; (b) and (c) surfaces of the SiO2 film after EBI; (d) XRD patterns of the oxide layers before and after EBI.
SIMS profile of boron concentration.
SEM images of silicon wafer surface: (a) surface of the silicon wafer before EBI; (b, d) and (c, e) surfaces of the silicon wafer after EBI for 1 h.
SIMS profile of silicon wafer without oxide layer.