<abstract xmlns="http://www.w3.org/1999/xhtml"> We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the existence of both Mott-Hubbard (d → d transition) and charge-transfer (p → d transition) characteristic of NiO. The optical band gap of NiO increases from 3.58 to 3.75 eV when irradiated at the fluence of 5 × 1014 ions cm-2 but it does not show any remarkable variation upon 800 keV Ar ion irradiation at higher fluences. The refractive index and electron polarizability at different ion fluences have been determined from the optical band gap. Both refractive index and electron polarizability follow an opposite trend to that of the energy gap as a function of ion fluence. </abstract>

We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the existence of both Mott-Hubbard (d → d transition) and charge-transfer (p → d transition) characteristic of NiO. The optical band gap of NiO increases from 3.58 to 3.75 eV when irradiated at the fluence of 5 × 1014 ions cm-2 but it does not show any remarkable variation upon 800 keV Ar ion irradiation at higher fluences. The refractive index and electron polarizability at different ion fluences have been determined from the optical band gap. Both refractive index and electron polarizability follow an opposite trend to that of the energy gap as a function of ion fluence.

UV-Vis studies of 800 keV Ar ion irradiated NiO thin films

Department of Physics, North Orissa University, Baripada 757003, Odisha, India

Department of Physics, Institute of Technical Education and Research, Siksha ’O’ Anusandhan University, Khandagiri Square, Bhubaneswar 751030, Odisha, India

Department of Physics, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710, South Africa

Inter-University Accelerator Center, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067, Utter Pradesh, India

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"UV-Vis studies of 800 keV Ar ion irradiated NiO thin films"}

We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the...

UV-Vis studies of 800 keV Ar ion irradiated NiO thin films

Published Online: Aug 30, 2016

Page range: 555 - 559

Received: Nov 04, 2014

Accepted: May 19, 2015

DOI: https://doi.org/10.1515/msp-2015-0082

Keywords
ion irradiation, nanoparticles, UV-Vis spectroscopy, band gap

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

UV-Vis studies of 800 keV Ar ion irradiated NiO thin films

Published Online: Aug 30, 2016

Page range: 555 - 559

Received: Nov 04, 2014

Accepted: May 19, 2015

DOI: https://doi.org/10.1515/msp-2015-0082

Keywordsion irradiation, nanoparticles, UV-Vis spectroscopy, band gap

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Keywords
ion irradiation, nanoparticles, UV-Vis spectroscopy, band gap