Multi-energy ion implantation from high-intensity laser

The laser-matter interaction using nominal laser intensity above 10¹⁵ W/cm² generates in vacuum non-equilibrium plasmas accelerating ions at energies from tens keV up to hundreds MeV. From thin targets, using the TNSA regime, plasma is generated in the forward direction accelerating ions above 1 MeV per charge state and inducing high-ionization states. Generally, the ion energies follow a Boltzmann-like distribution characterized by a cutoff at high energy and by a Coulomb-shift towards high energy increasing the ion charge state. The accelerated ions are emitted with the high directivity, depending on the ion charge state and ion mass, along the normal to the target surface. The ion fluencies depend on the ablated mass by laser, indeed it is low for thin targets. Ions accelerated from plasma can be implanted on different substrates such as Si crystals, glassy-carbon and polymers at different fluences. The ion dose increment of implanted substrates is obtainable with repetitive laser shots and with repetitive plasma emissions. Ion beam analytical methods (IBA), such as Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and proton-induced X-ray emission (PIXE) can be employed to analyse the implanted species in the substrates. Such analyses represent ‘off-line’ methods to extrapolate and to character the plasma ion stream emission as well as to investigate the chemical and physical modifications of the implanted surface. The multi-energy and species ion implantation from plasma, at high fluency, changes the physical and chemical properties of the implanted substrates, in fact, many parameters, such as morphology, hardness, optical and mechanical properties, wetting ability and nanostructure generation may be modified through the thermal-assisted implantation by multi-energy ions from laser-generated plasma.