Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

In this paper we report on the optical and electrical studies of single GaAs1−x Nx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1−x Nx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80–480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.