<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>In this paper we report on the optical and electrical studies of single GaAs1−x
                        Nx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1−x
                        Nx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80–480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.</p></abstract>

In this paper we report on the optical and electrical studies of single GaAs1−x
                        Nx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1−x
                        Nx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80–480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.

Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland

Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46, 02-668, Warsaw, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE"}

In this paper we report on the optical and electrical studies of single GaAs1−x
                        Nx epitaxial layers grown on GaAs substrates by means...

Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

Published Online: Dec 15, 2013

Page range: 595 - 600

DOI: https://doi.org/10.2478/s13536-013-0144-2

Keywords
GaAs1−xNx, I-V, C-V, transmittance and reflectance spectra

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

Published Online: Dec 15, 2013

Page range: 595 - 600

DOI: https://doi.org/10.2478/s13536-013-0144-2

KeywordsGaAs1−xNx, I-V, C-V, transmittance and reflectance spectra

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Keywords
GaAs1−xNx, I-V, C-V, transmittance and reflectance spectra