Coupled Defect Level Recombination in the P—N Junction

Juraj Racko 1 , Miroslav Mikolášek 1 , Peter Benko 1 , Ondrej Gallo 1 , Ladislav Harmatha 1 , Ralf Granzner 2  and Frank Schwierz 2
  • 1 Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia
  • 2 Technical University Ilmenau, PF 98684 Ilmenau, Germany

Coupled Defect Level Recombination in the P—N Junction

The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in the band gap of the semiconductor. The present paper generalizes the model to the case of two mutually coupled defect levels acting as trapping centres. If the intercenter transition is not considered, the model reduces to the case of two non-coupled levels treated by the SRH model.

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  • ISE Integrated System Engineering, Release 7.0, Volume 4a (1995), p. 12 215.

  • SCHENK, A.—KRUMBEIN, U.: Coupled Defect Recombination: Theory and Application to Anomalous Diode Characteristics, J. Appl. Phys. 78 (1995), 3185.

  • RACKO, J.: Unpublished results.

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