<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>In this paper MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs has been analyzed by a comparison of the results obtained from admittance and DLTS spectroscopy. Two groups of peaks with different magnitude and different gate voltage dependence have been observed in DLTS and admittance spectra. Based on the analysis of the peaks behavior, it has been concluded that they are associated with the response of bulk traps and interface states, respectively. In order to characterize bulk traps and interface states responsible for the occurrence of two groups of peaks in normalized conductance spectra we have used the equivalent circuit with two CPE-R branches. The time constant values estimated for both peaks from admittance analysis have been compared with the time constant determined from DLTS analysis. Some discrepancies have been noted between the time constants obtained for interface states whereas the time constants for bulk traps were compatible. It has been also demonstrated that when conductance peaks overlap, the admittance experimental data can be fitted by the equivalent electrical model with only one CPE-R branch. However, in this case incomplete information about the analyzed process has been obtained despite the fact that all model validity criteria can be fulfilled and the model seems to be correct.</p></abstract>

In this paper MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs has been analyzed by a comparison of the results obtained from admittance and DLTS spectroscopy. Two groups of peaks with different magnitude and different gate voltage dependence have been observed in DLTS and admittance spectra. Based on the analysis of the peaks behavior, it has been concluded that they are associated with the response of bulk traps and interface states, respectively. In order to characterize bulk traps and interface states responsible for the occurrence of two groups of peaks in normalized conductance spectra we have used the equivalent circuit with two CPE-R branches. The time constant values estimated for both peaks from admittance analysis have been compared with the time constant determined from DLTS analysis. Some discrepancies have been noted between the time constants obtained for interface states whereas the time constants for bulk traps were compatible. It has been also demonstrated that when conductance peaks overlap, the admittance experimental data can be fitted by the equivalent electrical model with only one CPE-R branch. However, in this case incomplete information about the analyzed process has been obtained despite the fact that all model validity criteria can be fulfilled and the model seems to be correct.

Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements

Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100, Gliwice, Poland

Faculty of Microsystem Electronics and Photonics, WrocŁaw University of Technology, Janiszewskiego 11, 50-372, Wrocław, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

In this paper MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs has been analyzed by a comparison of the results obtained from admittance and DLTS...

Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements

Data publikacji: 29 sie 2013

Zakres stron: 446 - 453

DOI: https://doi.org/10.2478/s13536-013-0124-6

Słowa kluczowe
MIS structure, deep levels, interface states, admittance spectroscopy, DLTS

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements

Data publikacji: 29 sie 2013

Zakres stron: 446 - 453

DOI: https://doi.org/10.2478/s13536-013-0124-6

Słowa kluczoweMIS structure, deep levels, interface states, admittance spectroscopy, DLTS

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Słowa kluczowe
MIS structure, deep levels, interface states, admittance spectroscopy, DLTS