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Structural properties of Sb- and Te-based binary compounds: Spin-orbit effect

   | 09 lut 2013

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[1] Jeon H., Ding J., Nurmikko A. V., Luo H., Samarth N., Fyrdyna J. K. Bonner W. A., Appl. Phys. Lett. 57 (1990), 2413. http://dx.doi.org/10.1063/1.10386210.1063/1.103862Search in Google Scholar

[2] Ichino K., Wu Y-H., Kawakami Y., Fujita S., Fujita S., J. Crystal Growth, 117 (1992), 527. http://dx.doi.org/10.1016/0022-0248(92)90807-U10.1016/0022-0248(92)90807-USearch in Google Scholar

[3] Fujita S., Hayashi S., Funato M., Yoshte T. and Fujita S., J. Crystal Growth, 107 (1991), 674. http://dx.doi.org/10.1016/0022-0248(91)90540-L10.1016/0022-0248(91)90540-LSearch in Google Scholar

[4] Hasse M. A., Qiu J., Depuydt J. M. and Cheng H., Appl. Phys. Lett. 59 (1991), 1272. http://dx.doi.org/10.1063/1.10547210.1063/1.105472Search in Google Scholar

[5] Sun G., Shahzad K., Gaines J. M. and Khurgin J. B., Appl. Phys. Lett. 59 (1991), 310. http://dx.doi.org/10.1063/1.10558010.1063/1.105580Search in Google Scholar

[6] Okuyama H., Nakano K., Miyajima T. and Akimoto K., Japan J. Appl. Phys. 30 (1991), L1620. http://dx.doi.org/10.1143/JJAP.30.L162010.1143/JJAP.30.L1620Search in Google Scholar

[7] Okuyama H., Nakano K., Miyajima T. and Akimoto K., J. Crystal Growth, 117 (1992), 139. http://dx.doi.org/10.1016/0022-0248(92)90732-X10.1016/0022-0248(92)90732-XSearch in Google Scholar

[8] Surch M. P., Li M. F. and Louis S. G., Phys. Rev. B 43 (1991), 4289. 10.1103/PhysRevA.43.4289Search in Google Scholar

[9] Hybertsen M. S. and Louis S. G., Phys. Rev. B 32 (1985), 7005; Phys. Rev. B 34 (1986), 5390. http://dx.doi.org/10.1103/PhysRevB.32.7005Search in Google Scholar

[10] Cohen M. L. and Bergstresser T. K., Phys. Rev. 141 (1966), 789. http://dx.doi.org/10.1103/PhysRev.141.78910.1103/PhysRev.141.789Search in Google Scholar

[11] Sazuki M., Uenoyama T., J. Crys. Growth, 189–190 (1998), 625. http://dx.doi.org/10.1016/S0022-0248(98)00224-310.1016/S0022-0248(98)00224-3Search in Google Scholar

[12] Reshak A. H., Kityk I. V., Khenata R., Auluck S., J. Alloys and Comp. 509 (2011), 6737. http://dx.doi.org/10.1016/j.jallcom.2011.03.02910.1016/j.jallcom.2011.03.029Search in Google Scholar

[13] Reshak A. H., Ouahrani T., Khenata R., Otero-de-la-roza A., Luana V., Baltache H., Comp. Mater. Sci. 50 (2011), 886. http://dx.doi.org/10.1016/j.commatsci.2010.10.02610.1016/j.commatsci.2010.10.026Search in Google Scholar

[14] Reshak A. H., Eur. Phys. J. B 47 (2005), 503. http://dx.doi.org/10.1140/epjb/e2005-00364-310.1140/epjb/e2005-00364-3Search in Google Scholar

[15] Reshak A. H., J. Chem. Phys. 124 (2006), 104707. http://dx.doi.org/10.1063/1.217880110.1063/1.2178801Search in Google Scholar

[16] Reshak A. H., Auluck S., Physica B 395 (2007), 143. http://dx.doi.org/10.1016/j.physb.2007.03.01210.1016/j.physb.2007.03.012Search in Google Scholar

[17] Reshak A. H., Auluck S., Physica B 388 (2007), 34. http://dx.doi.org/10.1016/j.physb.2006.05.00310.1016/j.physb.2006.05.003Search in Google Scholar

[18] Al-douri Y., Reshak A. H., Appl Phys A 104 (2011), 1159. http://dx.doi.org/10.1007/s00339-011-6400-610.1007/s00339-011-6400-6Search in Google Scholar

[19] Khenata R., Bouhemadou A., Sahnoun M., Reshak A. H., Baltache H., Rabah M., Comp. Mater. Sci. 38 (2006), 29. http://dx.doi.org/10.1016/j.commatsci.2006.01.01310.1016/j.commatsci.2006.01.013Search in Google Scholar

[20] Umar A. A., A. Reshak H., Oyama M., Plucinski K. J., J. Mater. Sci: Mater Electron 23 (2012), 546. http://dx.doi.org/10.1007/s10854-011-0434-610.1007/s10854-011-0434-6Search in Google Scholar

[21] Al-douri Y., Abid H., and Aourag H., Physica B 322 (2002), 179. http://dx.doi.org/10.1016/S0921-4526(02)01181-X10.1016/S0921-4526(02)01181-XSearch in Google Scholar

[22] Weisz G., Phys. Rev. 149 (1966), 504. http://dx.doi.org/10.1103/PhysRev.149.50410.1103/PhysRev.149.504Search in Google Scholar

[23] Chelikowsky J. R. and Cohen M. L., Phys. Rev. B 14 (1976), 556. http://dx.doi.org/10.1103/PhysRevB.14.55610.1103/PhysRevB.14.556Search in Google Scholar

[24] Hermann F., Kuglin C. D., Cuff K. F. and Kortum R. L., Phys. Rev. Lett. 11 (1963), 541. http://dx.doi.org/10.1103/PhysRevLett.11.54110.1103/PhysRevLett.11.541Search in Google Scholar

[25] Walter J. P., Cohen M. L., Petroff Y. and Balkanski M., Phys. Rev. B 1 (1970), 2661. http://dx.doi.org/10.1103/PhysRevB.1.266110.1103/PhysRevB.1.2661Search in Google Scholar

[26] Wepfer G. G., Collins T. C. and Euwema R. N., Phys. Rev. B 4 (1971), 1296. http://dx.doi.org/10.1103/PhysRevB.4.129610.1103/PhysRevB.4.1296Search in Google Scholar

[27] Roessler D. M. and Swets D. E., J. Appl. Phys. 49 (1978), 804. http://dx.doi.org/10.1063/1.32466210.1063/1.324662Search in Google Scholar

[28] Poon H. C., Feng Z. C., Feng Y. P. and Li M. F., J. Phys. Condens. Mater. 7 (1995), 2783. http://dx.doi.org/10.1088/0953-8984/7/14/01710.1088/0953-8984/7/14/017Search in Google Scholar

[29] Tsidilkovski I. M., Band strcuture of semiconductors, Pergamon Press, Oxford, 1982. 10.1016/B978-0-08-021657-7.50008-XSearch in Google Scholar

[30] Feng Y. P., K. Teo L., Li M. F., Poon H. C., Ong C. K. and Xia J. B., J. Appl. Phys. 74 (1993), 3948. http://dx.doi.org/10.1063/1.35446210.1063/1.354462Search in Google Scholar

[31] [31] Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology — Crystal and Solid State Physics, Vol. 22, Springer, Berlin, 1987. Search in Google Scholar

[32] Cohen M. L., Phys. Rev. B 32 (1985), 7988. http://dx.doi.org/10.1103/PhysRevB.32.798810.1103/PhysRevB.32.7988Search in Google Scholar

[33] Lam P. K., Cohen M. L., G. Martinez, Phys. Rev. B 35 (1987), 9190. http://dx.doi.org/10.1103/PhysRevB.35.919010.1103/PhysRevB.35.9190Search in Google Scholar

[34] Al-douri Y., Abid H., Aourag H., Physica B 305 (2001), 186. http://dx.doi.org/10.1016/S0921-4526(01)00594-410.1016/S0921-4526(01)00594-4Search in Google Scholar

[35] Zhang S. B., Cohen M. L., Phys. Rev. B 35 (1987), 7604. http://dx.doi.org/10.1103/PhysRevB.35.760410.1103/PhysRevB.35.76049941065Search in Google Scholar

[36] Chelikowsky J. R., Phys. Rev. B 35 (1987), 1174. http://dx.doi.org/10.1103/PhysRevB.35.117410.1103/PhysRevB.35.11749941524Search in Google Scholar

eISSN:
2083-124X
ISSN:
2083-1331
Język:
Angielski
Częstotliwość wydawania:
4 razy w roku
Dziedziny czasopisma:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties