<abstract xmlns="http://www.w3.org/1999/xhtml">Self-assembled Zn/ZnO microspheres have been accomplished on selected sites of boron doped P-type silicon substrates using hydrothermal approach. The high density Zn/ZnO microspheres were grown on the Si substrates by chemical treatment in mixed solution of zinc sulfate ZnSO4·7H2O and ammonium hydroxide NH4(OH) after uniform heating at 95 °C for 15 min. The Zn/ZnO microspheres had dimensions in the range of 1 <italic>μ</italic>m to 20 <italic>μ</italic>m and were created only on selected sites of silicon substrate. The crystal structure, chemical composition and morphology of as-prepared samples were studied by using scanning electron microscope SEM, X-ray diffraction XRD, energy dispersive X-ray spectroscopy EDS, Fourier transform infrared spectroscopy FT-IR and UV-Vis diffuse reflectance absorption spectra DRS. The energy band gap Eg of about 3.28 eV was obtained using Tauc plot. In summary, this study suggests that interfacial chemistry is responsible for the crystal growth on indented sites of silicon substrate and the hydrothermal based growth mechanism is proposed as a useful methodology for the formation of highly crystalline three dimensional (3-D) Zn/ZnO microspheres.</abstract>

Self-assembled Zn/ZnO microspheres have been accomplished on selected sites of boron doped P-type silicon substrates using hydrothermal approach. The high density Zn/ZnO microspheres were grown on the Si substrates by chemical treatment in mixed solution of zinc sulfate ZnSO4·7H2O and ammonium hydroxide NH4(OH) after uniform heating at 95 °C for 15 min. The Zn/ZnO microspheres had dimensions in the range of 1 μm to 20 μm and were created only on selected sites of silicon substrate. The crystal structure, chemical composition and morphology of as-prepared samples were studied by using scanning electron microscope SEM, X-ray diffraction XRD, energy dispersive X-ray spectroscopy EDS, Fourier transform infrared spectroscopy FT-IR and UV-Vis diffuse reflectance absorption spectra DRS. The energy band gap Eg of about 3.28 eV was obtained using Tauc plot. In summary, this study suggests that interfacial chemistry is responsible for the crystal growth on indented sites of silicon substrate and the hydrothermal based growth mechanism is proposed as a useful methodology for the formation of highly crystalline three dimensional (3-D) Zn/ZnO microspheres.

Synthesis and characterization of Zn/ZnO microspheres on indented sites of silicon substrate

Department of Physics, College of Science

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Self-assembled Zn/ZnO microspheres have been accomplished on selected sites of boron doped P-type silicon substrates using hydrothermal approach. The high...

Synthesis and characterization of Zn/ZnO microspheres on indented sites of silicon substrate

Data publikacji: 02 lis 2018

Zakres stron: 501 - 508

Otrzymano: 13 paź 2017

Przyjęty: 07 maj 2018

DOI: https://doi.org/10.2478/msp-2018-0058

Słowa kluczowe
Zn/ZnO, hydrothermal synthesis, microspheres, growth, indent

© 2018 Nasar Ahmed et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Synthesis and characterization of Zn/ZnO microspheres on indented sites of silicon substrate

Data publikacji: 02 lis 2018

Zakres stron: 501 - 508

Otrzymano: 13 paź 2017

Przyjęty: 07 maj 2018

DOI: https://doi.org/10.2478/msp-2018-0058

Słowa kluczoweZn/ZnO, hydrothermal synthesis, microspheres, growth, indent

© 2018 Nasar Ahmed et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Słowa kluczowe
Zn/ZnO, hydrothermal synthesis, microspheres, growth, indent