<abstract xmlns="http://www.w3.org/1999/xhtml">The present work reports the fabrication of p-Si/SiO2 /TiO2 and p-Si/SiO2 /TiO2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by <italic>I − V</italic>, C-V measurements and VIS spectroscopy, respectively. The measurements reveal that <italic>I − V</italic> characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The <italic>I − V</italic> characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2 /TiO2 interlayer.</abstract>

The present work reports the fabrication of p-Si/SiO2 /TiO2 and p-Si/SiO2 /TiO2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by I − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal that I − V characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The I − V characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2 /TiO2 interlayer.

Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Slovak University of Technology in Bratislava

Institute of Electrical Engineering, Slovak Academy of Sciences

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Fabrication and characterization of Si/SiO/TiO/ZnO heterostructures from sputtered and oxidized Ti-film

The present work reports the fabrication of p-Si/SiO2 /TiO2 and p-Si/SiO2 /TiO2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The...

Fabrication and characterization of Si/SiO₂/TiO₂/ZnO heterostructures from sputtered and oxidized Ti-film

Data publikacji: 29 gru 2017

Zakres stron: 58 - 61

Otrzymano: 23 kwi 2017

DOI: https://doi.org/10.1515/jee-2017-0057

Słowa kluczowe
SIS heterostructures, thin films, Ga-doped ZnO, TiO, Si, SIMS, characteristics, spectroscopy

© 2017 Jaroslav Kováč et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Data publikacji: 29 gru 2017

Zakres stron: 58 - 61

Otrzymano: 23 kwi 2017

DOI: https://doi.org/10.1515/jee-2017-0057

Słowa kluczoweSIS heterostructures, thin films, Ga-doped ZnO, TiO, Si, SIMS, characteristics, spectroscopy

© 2017 Jaroslav Kováč et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Fabrication and characterization of Si/SiO₂/TiO₂/ZnO heterostructures from sputtered and oxidized Ti-film

Słowa kluczowe
SIS heterostructures, thin films, Ga-doped ZnO, TiO, Si, SIMS, characteristics, spectroscopy