Graphene prepared on SiC by chemical vapor deposition process at low temperature
| 21 ott 2019
INFORMAZIONI SU QUESTO ARTICOLO
Pubblicato online: 21 ott 2019
Pagine: 329 - 331
Ricevuto: 06 giu 2019
DOI: https://doi.org/10.2478/jee-2019-0064
Parole chiave
© 2019 Petr Machac, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.