<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.</p></abstract>

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Multifractal characterization of epitaxial silicon carbide on silicon

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Multifractal characterization of epitaxial silicon carbide on silicon"}

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force...

Multifractal characterization of epitaxial silicon carbide on silicon

Pubblicato online: 31 ott 2017

Pagine: 539 - 547

Ricevuto: 13 ott 2016

Accettato: 28 mar 2017

DOI: https://doi.org/10.1515/msp-2017-0049

Parole chiave
surface roughness, multifractal analysis, atomic force microscopy, silicon carbide, film growth

© 2017

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Multifractal characterization of epitaxial silicon carbide on silicon

Pubblicato online: 31 ott 2017

Pagine: 539 - 547

Ricevuto: 13 ott 2016

Accettato: 28 mar 2017

DOI: https://doi.org/10.1515/msp-2017-0049

Parole chiavesurface roughness, multifractal analysis, atomic force microscopy, silicon carbide, film growth

© 2017

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Parole chiave
surface roughness, multifractal analysis, atomic force microscopy, silicon carbide, film growth