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Materials Science-Poland
Volume 34 (2016): Numero 4 (December 2016)
Accesso libero
Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates
Łukasz Kosior
Łukasz Kosior
,
Damian Radziewicz
Damian Radziewicz
,
Iwona Zborowska-Lindert
Iwona Zborowska-Lindert
,
Andrzej Stafiniak
Andrzej Stafiniak
,
Mikołaj Badura
Mikołaj Badura
e
Beata Ściana
Beata Ściana
| 06 nov 2016
Materials Science-Poland
Volume 34 (2016): Numero 4 (December 2016)
INFORMAZIONI SU QUESTO ARTICOLO
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CONDIVIDI
Pubblicato online:
06 nov 2016
Pagine:
872 - 880
Ricevuto:
25 apr 2016
Accettato:
06 set 2016
DOI:
https://doi.org/10.1515/msp-2016-0103
Parole chiave
epitaxy
,
MOVPE
,
patterned substrate
,
wet etching
,
mask material
© 2016 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Technological steps of patterned substrate epitaxy.
Schematic view of the mask film and its arrangement in relation to crystallographic directions.
Schematic view of structure applied in the regrowth process.
SEM images of substrate after etching in 1HCl:3H3PO4 solution with photoresist as a mask (a) ∼2 µm etching depth, (b) deep etching with photoresist mask already removed.
SEM images of surface after etching in 1HCl:3H3PO4 with Si3N4 as a mask material (a) ∼2 µm etching depth, (b) ∼10 µm etching depth.
WLI measurement result after 5 minute etching in 1HCl:1CH3COOH:1H2O2 solution.
SEM images of an InP substrate etched in 1HCl:1CH3COOH:1H2O2 (a) general view, (b) measured thickness of the etching.
WLI measurement result after 5 minute etching in 1HCl:1CH3COOH:1H2O2 solution.
SEM images of an InP substrate etched in 1HCl:1H2O (a) general view with visible gaps, (b) part of ‘cross’ mask, (c) part of rounded mesa (d) slopes view.
Profilometer measurement results of 5 minute etching in 1HCl:3H3PO4 mixture.
SEM images of an InP substrate etched in 1HCl:3H3PO4 (a) slope view, (b) ‘cross’ mask view, (c) slope in 11¯0$\left\langle {1\;\bar 1\;0} \right\rangle$ (d) dimensions of 11¯0$\left\langle {1\;\bar 1\;0} \right\rangle$ slope.
Images taken with an optical microscope using a phase contrast technique (both from the same sample) (a) shallow etching site and (b) deep etching site.
Optical microscope images of P82 surface (a) dark field method and (b) phase contrast.
SEM image of A sample cross-section.
Panoramic view of round shape mesa slope of sample A.
SEM top view images of A sample.
SEM cross-section images of B2 sample.
SEM images of the same area in (a) B1 and (b) B2 samples.
Methods for the preparation of substrates for the epitaxial regrowth.
Sample
Mask
Etching solution
A
Photoresist
1HCl: 1H
3
PO
4
B1
B2
SiN