<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen) were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN) layers grown on silicon Si(1 1 1) were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS) and Spectroscopic Ellipsometry (SE). Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a) dry oxidation with oxygen, (b) wet oxidation with water steam and (c) mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.</p></abstract>

Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen) were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN) layers grown on silicon Si(1 1 1) were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS) and Spectroscopic Ellipsometry (SE). Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a) dry oxidation with oxygen, (b) wet oxidation with water steam and (c) mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11-17, 50-370 Wroclaw,

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen) were compared. Some physical parameters of oxidized thin films of aluminum nitride...

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

Article Category: Research Article

Publié en ligne: 27 avr. 2016

Pages: 157 - 163

Reçu: 16 août 2016

Accepté: 16 nov. 2016

DOI: https://doi.org/10.1515/msp-2016-0010

Mots clés
thermal oxidation, AlN, AlO, AlON, EDS, SE

© 2016 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

Article Category: Research Article

Publié en ligne: 27 avr. 2016

Pages: 157 - 163

Reçu: 16 août 2016

Accepté: 16 nov. 2016

DOI: https://doi.org/10.1515/msp-2016-0010

Mots clésthermal oxidation, AlN, AlO, AlON, EDS, SE

© 2016 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
thermal oxidation, AlN, AlO, AlON, EDS, SE