Structure of AlN films deposited by magnetron sputtering method

[1] KAR J.P., BOSE G., TULI S., Vacuum, 81 (4) (2006), 494.10.1016/j.vacuum.2006.07.006Search in Google Scholar

[2] CHIU K.H., CHEN J.H., CHEN H.R., HUANG R.S., Thin Solid Films, 515 (2007), 4819.10.1016/j.tsf.2006.12.181Search in Google Scholar

[3] OLIVARES J., RIVERA J., BRIONES A., Diam. Relat. Mater., 16 (2007), 1421.Search in Google Scholar

[4] JANG K., LEE K., KIM J., HWANG S., LEE J., DHUNGEL S.K., JUNG S., YI J., Mat. Sci. Semicon. Proc., 9 (2006), 1137.10.1016/j.mssp.2006.10.052Search in Google Scholar

[5] PRINZ G.M., LADENBURGER A., FENEBERG M., SCHIRRA M., THAPA S.B., BICKERMANN M., EPELBAUM B.M., SCHOLZ F., THONKE K., SAUER R., Superlattice. Microst., 40 (2006), 513.10.1016/j.spmi.2006.10.001Search in Google Scholar

[6] DUBOIS M.A., MURALT P., Appl. Phys. Lett., 74 (1999), 3032.10.1063/1.124055Search in Google Scholar

[7] LOEBL H.P., KLEE M., METZMACHER C., BRAND W., MILSOM R., LOK P., Mater. Chem. Phys., 79 (2003), 143.10.1016/S0254-0584(02)00252-3Search in Google Scholar

[8] DIMITROVAV., MANOVA D., PASKOVA T., UZUNOV T., IVANOV N., DECHEV D., Vacuum, 51 (1998), 161.10.1016/S0042-207X(98)00150-XSearch in Google Scholar

[9] MANOVA D., DIMITROVA V., FUKAREK W., KARPUZOV D., Surf. Coat. Tech., 106 (1998), 205.10.1016/S0257-8972(98)00527-1Search in Google Scholar

[10] STEVENS K.S., OHTANI A., KINNIBURGH M., BERESFORD R., Appl. Phys. Lett., 65 (1994), 321.10.1063/1.112359Search in Google Scholar

[11] YOSHIDA S., MISAWA S., FUJII Y., TAKADA S., HATAKAWA H., GONDA S., ITOH A., J. Vac. Sci. Technol., 16 (1979), 990.10.1116/1.570166Search in Google Scholar

[12] OKAMOTO M., YAMAOKA M., YAP Y.K., YOSHIMURA M., MORI Y., SASAKI T., Diam. Relat. Mater., 9 (2000), 516.10.1016/S0925-9635(00)00216-8Search in Google Scholar

[13] NORTON M.G., KOTULA P.G., CARTER C.B., J. Appl. Phys., 70 (1991), 2671.10.1063/1.349352Search in Google Scholar

[14] VISPUTE R., Thin Solid Films, 299 (1997), 94.10.1016/S0040-6090(96)09395-9Search in Google Scholar

[15] OKANO H., TAKAHASHI Y., TANAKA T., SHIBATA K., NAKANO S., Jpn. J. Appl. Phys., 31 (1992), 3446.10.1143/JJAP.31.3446Search in Google Scholar

[16] CHENG C.C., CHEN Y.C., WANG H.J., CHEN W.R., J. Vac. Sci. Technol. A, 14 (1996), 2238.10.1116/1.588627Search in Google Scholar

[17] NAIK R.S., REIF R., LUTSKY J.J., SODINI C.G., J. Electrochem. Soc., 146 (1999), 691.10.1149/1.1391664Search in Google Scholar

[18] OHUCHI S., RUSSEL P.E., J. Vac. Sci. Technol. A, 5 (1987), 1630.Search in Google Scholar

[19] HWANG B.-H., CHEN C.-S., LU H.-Y., HSU T.-C., Mat. Sci. Eng. A-Struct., 325 (2002), 380.10.1016/S0921-5093(01)01477-0Search in Google Scholar

[20] KAMOHARA T., AKIYAMA M., UENO N., NONAKA K., TATEYAMA H., J. Cryst. Growth, 275 (2005), 383.10.1016/j.jcrysgro.2004.12.014Search in Google Scholar

[21] POSADOWSKI W., WIATROWSKI A., DORA J., RADZI´NSKI Z., Thin Solid Films, 516 (14) (2008), 4478.10.1016/j.tsf.2007.05.077Search in Google Scholar

[22] BAIL LE A., DUROY H., FOURQUET J.L., Mat. Res. Bull., 23, (1988), 447.10.1016/0025-5408(88)90019-0Search in Google Scholar

[23] RODRIGUEZ-CARVAJAL J., Comm. Powder Diffr. Newsl., 26 (2001), 12.Search in Google Scholar

[24] THORNTON J.A., J. Vac. Sci. Technol., 4 (1974), 666.Search in Google Scholar

[25] GOLDBERG Y., Aluminum Nitride (AlN), in: LEVINSHTEIN M.E., RUMYANTSEV S.L., SHUR M.S. (Eds.), Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, John Wiley & Sons, Inc., New York, 2001.Search in Google Scholar

[26] PASZKOWICZ W., PODSIADLO S., MINIKAYEV R., J. Alloy. Compd., 382 (2004), 100. 10.1016/j.jallcom.2004.05.036Search in Google Scholar