<abstract xmlns="http://www.w3.org/1999/xhtml"> This article deals with the investigation of the influence of sintering conditions on the formation process of screen printed contacts on passivated boron doped P+ emitters. The experiment was focused on measuring of resistance changes of two thick film pastes during firing processes with different conditions. Two different temperature profiles were compared at an atmospheric concentration of O2. The influence of the O2 concentration on resistance was investigated for one profile. A rapid thermal processing furnace modified for in-situ resistance measurements was used. The change of resistance was measured simultaneously with the temperature.</abstract>

This article deals with the investigation of the influence of sintering conditions on the formation process of screen printed contacts on passivated boron doped P+ emitters. The experiment was focused on measuring of resistance changes of two thick film pastes during firing processes with different conditions. Two different temperature profiles were compared at an atmospheric concentration of O2. The influence of the O2 concentration on resistance was investigated for one profile. A rapid thermal processing furnace modified for in-situ resistance measurements was used. The change of resistance was measured simultaneously with the temperature.

Investigation of Contact Formation during Silicon Solar Cell Production

Department of Microelectronics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technická 3058/10, Brno 616 00

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Investigation of Contact Formation during Silicon Solar Cell Production"}

This article deals with the investigation of the influence of sintering conditions on the formation process of screen printed contacts on passivated boron...

Investigation of Contact Formation during Silicon Solar Cell Production

Publié en ligne: 28 juin 2016

Pages: 231 - 233

Reçu: 22 janv. 2016

DOI: https://doi.org/10.1515/jee-2016-0034

Mots clés
silicon solar cell, metallization, contacts formation, N-type, in-situ resistance measurement

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Investigation of Contact Formation during Silicon Solar Cell Production

Publié en ligne: 28 juin 2016

Pages: 231 - 233

Reçu: 22 janv. 2016

DOI: https://doi.org/10.1515/jee-2016-0034

Mots cléssilicon solar cell, metallization, contacts formation, N-type, in-situ resistance measurement

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Mots clés
silicon solar cell, metallization, contacts formation, N-type, in-situ resistance measurement