<abstract xmlns="http://www.w3.org/1999/xhtml"><p>GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E<sub>2</sub> (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.</p></abstract>

GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Department of Physics, Faculty of Art and Science

Department of Physics, Faculty of Science

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and...

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Publicado en línea: 18 oct 2019

Páginas: 454 - 464

Recibido: 23 jul 2018

Aceptado: 01 mar 2019

DOI: https://doi.org/10.2478/msp-2019-0052

Palabras clave
RF magnetron sputtering, thin film, III-nitride, GaN, semiconductor

© 2019 Asim Mantarci et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Publicado en línea: 18 oct 2019

Páginas: 454 - 464

Recibido: 23 jul 2018

Aceptado: 01 mar 2019

DOI: https://doi.org/10.2478/msp-2019-0052

Palabras claveRF magnetron sputtering, thin film, III-nitride, GaN, semiconductor

© 2019 Asim Mantarci et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
RF magnetron sputtering, thin film, III-nitride, GaN, semiconductor