Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications
, , , , , , , , , y | 18 jun 2016
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Article Category: Research Article
Publicado en línea: 18 jun 2016
Páginas: 297 - 301
Recibido: 10 jun 2015
Aceptado: 13 ene 2016
DOI: https://doi.org/10.1515/msp-2016-0034
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© Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
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Summary of the Al impurity concentrations, FWHM (full width at half-maximum) values from the main peaks in the XRD graphs, optical bandgaps, and resistivities of the three samples used in this study.
| Top | Middle Bottom | ||
|---|---|---|---|
| Al impurity conc. [ppm] | 0.12 | 0.09 | 0.47 |
| FWHM [radian] | 0.215 | 0.156 | 0.223 |
| Optical bandgap [eV] | 2.79 | 2.76 | 2.78 |
| Resistivity [×1011 Ω·cm] | 2.2 | 2.5 | 2.2 |
Summary of the major impurities observed in the raw material and in the three samples, which were measured using an ICP-MS.
| Unit [ppm] | Na | Ca | Mg | Fe | Al | Si | Ga | K | In |
|---|---|---|---|---|---|---|---|---|---|
| Raw material | 2.00 | 5.00 | 0.20 | 3.00 | 0.50 | 2.00 | 0.20 | 0.10 | 0.10 |
| Top | 0.00 | 0.00 | 0.01 | 0.15 | 0.12 | 0.00 | 0.00 | 0.00 | 0.00 |
| Middle | 0.00 | 0.00 | 0.00 | 0.04 | 0.09 | 0.00 | 0.00 | 0.00 | 0.00 |
| Bottom | 0.00 | 0.00 | 0.04 | 0.22 | 0.47 | 0.00 | 0.00 | 0.00 | 0.00 |