<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of heterostructures with the lattice parameter different from that of the substrates available on market (GaAs, GaP, InP or InAs). In this paper we report on the preparation of the step graded In<italic>x</italic>Ga1-<italic>x</italic>P buffer layers on the GaP substrate. The final In<italic>x</italic>Ga1-<italic>x</italic>P composition <italic>x</italic>In was chosen to be at least 0.27. At this composition the In<italic>x</italic>Ga1-<italic>x</italic>P band-gap structure converts from the indirect to the direct one and the material of such composition is suitable for application in light emitting diode structures. Our task was to design a set of layers with graded composition (graded buffer layer) and to optimize growth parameters with the aim to prepare strain relaxed template of quality suitable for the subsequent epitaxial growth.</abstract>

Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of heterostructures with the lattice parameter different from that of the substrates available on market (GaAs, GaP, InP or InAs). In this paper we report on the preparation of the step graded InxGa1-xP buffer layers on the GaP substrate. The final InxGa1-xP composition xIn was chosen to be at least 0.27. At this composition the InxGa1-xP band-gap structure converts from the indirect to the direct one and the material of such composition is suitable for application in light emitting diode structures. Our task was to design a set of layers with graded composition (graded buffer layer) and to optimize growth parameters with the aim to prepare strain relaxed template of quality suitable for the subsequent epitaxial growth.

Epitaxial Growth of GaP/In<italic>x</italic>Ga1-<italic>x</italic>P (<italic>x</italic>In ≥ 0.27) Virtual Substrate for Optoelectronic Applications

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia

Faculty of Electrical Engineering and Information Technology, Slovak University of Technology Bratislava, Ilkovičova 3, 812 19 Bratislava, Slovakia

Journal of Electrical Engineering

Epitaxial Growth of GaP/InGaP ( ≥ 0.27) Virtual Substrate for Optoelectronic Applications

Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of...

Epitaxial Growth of GaP/In_xGa_1-xP (x_In ≥ 0.27) Virtual Substrate for Optoelectronic Applications

Online veröffentlicht: 07. Juni 2011

Seitenbereich: 93 - 98

DOI: https://doi.org/10.2478/v10187-011-0015-1

Schlüsselwörter
crystal structure, organometallic vapor phase epitaxy (OMVPE), semiconducting III-V materials

This content is open access.

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications