Uneingeschränkter Zugang

Effect of temperature on the electrical properties of Zn0.95M0.05O (M = Zn, Fe, Ni)

 und    | 26. März 2014

Zitieren

[1] Gupta T.K., J. Am. Ceram. Soc., 73 (1990), 1817. http://dx.doi.org/10.1111/j.1151-2916.1990.tb05232.x10.1111/j.1151-2916.1990.tb05232.xSearch in Google Scholar

[2] Glot A.B., J. Mater. Sci.-Mater. E., 17 (2006), 755. http://dx.doi.org/10.1007/s10854-006-0019-y10.1007/s10854-006-0019-ySearch in Google Scholar

[3] Senos A.M.R., Santos M.R., Moreira A.P., Vieira J.M., In Surface and Interfaces of Ceramic Materials, sced. Dufour L. C., Monty C., Petotervas G., NATO ASI Series, Kluwer Academic, London (1988), 553. 10.1007/978-94-009-1035-5_34Search in Google Scholar

[4] Senos A.M.R., Vieira J.M., In Proceedings of the International Conference Third Euro-Ceramics, ed. Duran P., Fernandez J. F., Faenza Edit Rice Iberica Faenza S. L., 1 (1993), 821. Search in Google Scholar

[5] Senos A.M.R., PhD Thesis, University of Aveiro, Aveiro (1993). Search in Google Scholar

[6] Levine J.D., Crit C.R.C., Rev. Solid State. Sci., 5 (1975), 597. 10.1080/10408437508243517Search in Google Scholar

[7] Bernasconi J., Strassler S., Knecht B., Klein H.P., Menth A., Solid. State. Commun., 21 (1977), 867. http://dx.doi.org/10.1016/0038-1098(77)90351-910.1016/0038-1098(77)90351-9Search in Google Scholar

[8] Einzinger R., Appl. Surf. Sci., 3 (1979), 390. http://dx.doi.org/10.1016/0378-5963(79)90008-410.1016/0378-5963(79)90008-4Search in Google Scholar

[9] Senos A.M.R., Baptista J.L., J. Mat. Sci. Lett., 3 (1984), 213. http://dx.doi.org/10.1007/BF0072679710.1007/BF00726797Search in Google Scholar

[10] Glot A.B., Hogarth C.A., Bulpett R., Int. J. Electron., 65 (1988), 797. http://dx.doi.org/10.1080/0020721880894527810.1080/00207218808945278Search in Google Scholar

[11] Mahan G.D., Levinson L.M., Philipp H.R., J. Appl. Phys., 50 (1979), 2799. http://dx.doi.org/10.1063/1.32619110.1063/1.326191Search in Google Scholar

[12] In Proceedings of the Mater Res Soc Ann Meet., On Grain boundaries in Semiconductors, ed. by Pike G.E., Seager C.H., Leamy H.J., Elsevier (1982), 369. Search in Google Scholar

[13] Kisi E., Elcombe M.M., Acta Crystallogr. C, 45 (1989), 1867. http://dx.doi.org/10.1107/S010827018900426910.1107/S0108270189004269Search in Google Scholar

[14] Özgüra Ü. et al., J. Appl. Phys., 98 (2005), 041301. http://dx.doi.org/10.1063/1.199266610.1063/1.1992666Search in Google Scholar

[15] Sedky A., Abu-Abdeen M., Abdel-azaz Almoulhem, Physica B, 388 (2007), 266. http://dx.doi.org/10.1016/j.physb.2006.06.14910.1016/j.physb.2006.06.149Search in Google Scholar

[16] Deshpande V.V., Patil M.M., Ravi V., Ceram. Int., 32 (2006), 85. http://dx.doi.org/10.1016/j.ceramint.2005.01.00310.1016/j.ceramint.2005.01.003Search in Google Scholar

[17] Houabes M., Bernik S., Talhi Ch., Bui A., Ceram. Int., 29(6) (2005), 783. http://dx.doi.org/10.1016/j.ceramint.2004.09.00410.1016/j.ceramint.2004.09.004Search in Google Scholar

[18] Matsouka M., Jpn. J. Appl. Phys., 10(6) (1971), 736. http://dx.doi.org/10.1143/JJAP.10.73610.1143/JJAP.10.736Search in Google Scholar

[19] Choon-Woo Nahm, Mat. Sci. Eng. B-Solid., 136(2–3) (2007), 134. http://dx.doi.org/10.1016/j.mseb.2006.09.01010.1016/j.mseb.2006.09.010Search in Google Scholar

[20] Sedky A., E.El-Suheel E., Chin. Phys. B, 21(11) (2012), 116103. http://dx.doi.org/10.1088/1674-1056/21/11/11610310.1088/1674-1056/21/11/116103Search in Google Scholar

[21] Ohashi N. et al., Jpn. J. Appl. Phys., 38 (1999), 5028. http://dx.doi.org/10.1143/JJAP.38.502810.1143/JJAP.38.5028Search in Google Scholar

[22] Oba F., Tanaka I., Adachi H., Jpn. J. Appl. Phys., 38 (1999), 3569. http://dx.doi.org/10.1143/JJAP.38.356910.1143/JJAP.38.3569Search in Google Scholar

[23] Mantas P.Q., Baptista J.L., J. Eur. Ceram. Soc., 15 (1995), 605. http://dx.doi.org/10.1016/0955-2219(95)00025-P10.1016/0955-2219(95)00025-PSearch in Google Scholar

[24] Han J., Mantas P.Q., Senos A.M.R., J. Eur. Ceram. Soc., 21 (2001), 1883. http://dx.doi.org/10.1016/S0955-2219(01)00136-410.1016/S0955-2219(01)00136-4Search in Google Scholar

[25] Carlson W.G., Gupta T.K., Appl. Phys., 53 (1982), 5746. http://dx.doi.org/10.1063/1.33146310.1063/1.331463Search in Google Scholar

[26] Tsal Y.L., Huang C.L., Wei C.C., J. Mater. Sci. Lett., 4 (1985), 1305. http://dx.doi.org/10.1007/BF0072008710.1007/BF00720087Search in Google Scholar

[27] Ayman Sawalha, Sedky A., Abu-Abdeen M., Physica B, 404 (2009), 1316. http://dx.doi.org/10.1016/j.physb.2008.12.01710.1016/j.physb.2008.12.017Search in Google Scholar

[28] Guangqing Pei, Changtai Xia, Shixun Cao, Jungang Zhang, Feng Wu, Jun Xu, J. Magn. Magn. Mater., 302(2) (2006), 340. http://dx.doi.org/10.1016/j.jmmm.2005.09.02910.1016/j.jmmm.2005.09.029Search in Google Scholar

[29] Wei S. H., Zounger A., Phys. Rev. B, 37 (1988), 8958. http://dx.doi.org/10.1103/PhysRevB.37.895810.1103/PhysRevB.37.8958Search in Google Scholar

[30] Martins J. L., Troullier N., Wei S. H., Phys. Rev. B, 43 (1991), 2213. http://dx.doi.org/10.1103/PhysRevB.43.221310.1103/PhysRevB.43.2213Search in Google Scholar

[31] Xu Y.N., Ching W. Y., Phys. Rev. B, 48 (1993), 4335. http://dx.doi.org/10.1103/PhysRevB.48.433510.1103/PhysRevB.48.433510008905Search in Google Scholar

[32] Vogel D., Krüger P., Pollmann J., Phys. Rev. B, 52 (1995), R14316. http://dx.doi.org/10.1103/PhysRevB.52.R1431610.1103/PhysRevB.52.R14316Search in Google Scholar

[33] Zakharov O., Rubio A., Blasé X., Cohen M. L., Louie S. G., Phys. Rev. B, 50 (1994), 10780. http://dx.doi.org/10.1103/PhysRevB.50.1078010.1103/PhysRevB.50.107809975177Search in Google Scholar

eISSN:
2083-124X
ISSN:
2083-1331
Sprache:
Englisch
Zeitrahmen der Veröffentlichung:
4 Hefte pro Jahr
Fachgebiete der Zeitschrift:
Materialwissenschaft, andere, Nanomaterialien, Funktionelle und Intelligente Materialien, Charakterisierung und Eigenschaften von Materialien