<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>In this study we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77–350 K. Si-doped GaN layers were grown by Molecular Beam Epitaxy technique (MBE) on sapphire substrates. DLTS signal spectra revealed the presence of four majority traps: two hightemperature and two low-temperature peaks. Using LDLTS method and Arrhenius plots the activation energy and capture cross sections were obtained. For two high-temperature majority traps they are equal to E1 = 0.65 eV, σ1 = 8.2 × 10−16cm2 and E2 = 0.58 eV, σ2 = 2.6 × 10−15 cm2 whereas for the two low-temperature majority traps E3 = 0.18 eV, σ3 = 9.72 × 10−18 cm2 and E4 = 0.13 eV, σ4 = 9.17 × 10−18 cm2. It was also found that the traps are related to point defects. Possible origin of the traps was discussed and the results were compared with the data found elsewhere [1–5].</p></abstract>

In this study we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77–350 K. Si-doped GaN layers were grown by Molecular Beam Epitaxy technique (MBE) on sapphire substrates. DLTS signal spectra revealed the presence of four majority traps: two hightemperature and two low-temperature peaks. Using LDLTS method and Arrhenius plots the activation energy and capture cross sections were obtained. For two high-temperature majority traps they are equal to E1 = 0.65 eV, σ1 = 8.2 × 10−16cm2 and E2 = 0.58 eV, σ2 = 2.6 × 10−15 cm2 whereas for the two low-temperature majority traps E3 = 0.18 eV, σ3 = 9.72 × 10−18 cm2 and E4 = 0.13 eV, σ4 = 9.17 × 10−18 cm2. It was also found that the traps are related to point defects. Possible origin of the traps was discussed and the results were compared with the data found elsewhere [1–5].

Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland

Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

In this study we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature...

Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

Online veröffentlicht: 15. Dez. 2013

Seitenbereich: 572 - 576

DOI: https://doi.org/10.2478/s13536-013-0138-0

Schlüsselwörter
GaN, DLTS, LDLTS

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

Online veröffentlicht: 15. Dez. 2013

Seitenbereich: 572 - 576

DOI: https://doi.org/10.2478/s13536-013-0138-0

SchlüsselwörterGaN, DLTS, LDLTS

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
GaN, DLTS, LDLTS