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Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method


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eISSN:
2083-134X
Sprache:
Englisch
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4 Hefte pro Jahr
Fachgebiete der Zeitschrift:
Materialwissenschaft, andere, Nanomaterialien, Funktionelle und Intelligente Materialien, Charakterisierung und Eigenschaften von Materialien