Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

[1] MURAKAMI, M. et al : Ohmic contacts for compound semiconductors, Crit. Rev.in Solid State and Mater. Sci. 23 No. 1 (1998).10.1080/10408439891324167Search in Google Scholar

[2] HO, J. K. et al : Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films, J. Appl. Phys. 86 (1999), 4491.10.1063/1.371392Search in Google Scholar

[3] MISTELE, D. et al : Ohmic contacts for compound semiconductors, J. Cryst. Growth No. 230 (2001), 564.10.1016/S0022-0248(01)01250-7Search in Google Scholar

[4] JANG, H. W. et al : Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN, J. Appl. Phys. 97 (2003), 1748.10.1063/1.1586983Search in Google Scholar

[5] WENZEL, R. et al : Ohmic contacts on p-GaN, Mater. Sci. Semicond. Process. 4 (2001), 357.10.1016/S1369-8001(00)00177-3Search in Google Scholar

[6] PARK, M. R. et al : Microstructure and electrical properties of low temperature processed ohmic contacts to p-type GaN, ETRI Journ. 24 (2002), 349.10.4218/etrij.02.0102.0503Search in Google Scholar

[7] WANG, S. H. et al : Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air, J. Appl. Phys. 91 (2002), 3711.10.1063/1.1448885Search in Google Scholar

[8] LIDAY, J. et al : Investigation of NiOx-based contacts on p-GaN, J. Mater. Sci: Mater. Electron. 19 (2008), 855.10.1007/s10854-007-9520-1Search in Google Scholar

[9] SONG, J. O. et al : Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni-Mg solid solution, Appl. Phys. Lett. 83 (2004), 3513.10.1063/1.1622984Search in Google Scholar

[10] SONG, J. O. et al : Low-resistance and transparent ohmic contacts to p-type GaN using Ni-Zn solid solution /Au scheme, Appl. Phys. Lett. 84 (2004), 4663.10.1063/1.1759774Search in Google Scholar

[11] LIDAY, J. et al : Improving the Ohmic properties of contacts to p-GaN by adding p-type dopants into the metallization layer, J. Electrical Engin. 63 (2012), 397.10.2478/v10187-012-0059-xSearch in Google Scholar

[12] LEE, K. et al : Single wall carbon nanotubes for p-type ohmic contacts to p-GaN light-emitting diodes, Nano Lett. 4 (2004), 911.10.1021/nl0496522Search in Google Scholar

[13] POPOV, V. N. : Carbon nanotubes: properties and application, Mater. Sci. Engin. R43 (2004), 61.10.1016/j.mser.2003.10.001Search in Google Scholar

[14] ZHAO, J. et al : Optical properties and photonic devices of doped carbon nanotubes, Analytica Chim. Acta. 568 (2006), 161.10.1016/j.aca.2006.02.006Search in Google Scholar