<abstract xmlns="http://www.w3.org/1999/xhtml"><p> In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 - 300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.</p></abstract>

In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 - 300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Department of Solid State Engineering, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 120 00 Prague, Czech Republic

Department of Optical Materials, Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00 Prague,

Department of Solid State Engineering, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 120 00 Prague,

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in...

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Online veröffentlicht: 14. März 2017

Seitenbereich: 74 - 78

Eingereicht: 07. Juli 2016

DOI: https://doi.org/10.1515/jee-2017-0010

Schlüsselwörter
silicon vacancy centres, photoluminescence, low temperature, diamond, CVD

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Online veröffentlicht: 14. März 2017

Seitenbereich: 74 - 78

Eingereicht: 07. Juli 2016

DOI: https://doi.org/10.1515/jee-2017-0010

Schlüsselwörtersilicon vacancy centres, photoluminescence, low temperature, diamond, CVD

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Schlüsselwörter
silicon vacancy centres, photoluminescence, low temperature, diamond, CVD