<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">A 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of &lt; 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, an <italic>n</italic>-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.</abstract>

A 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, an n-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga, LV-1063, LATVIA

Latvian Journal of Physics and Technical Sciences

{"article-title":"AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode"}

A 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the...

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

Published Online: Sep 23, 2008

Page range: 25 - 32

DOI: https://doi.org/10.2478/v10047-008-0017-3

This content is open access.