[[1] Henini M., Dilute Nitride Semiconductors, Elsevier, School of Physics and Astronomy, University of Nottingham, UK, 2005. ]Search in Google Scholar
[[2] Bisping D. et al., IEEE J. Selected Topics in Quantum Electronics, 15 (2009), 968. http://dx.doi.org/10.1109/JSTQE.2009.201425010.1109/JSTQE.2009.2014250]Search in Google Scholar
[[3] Ptak A. J., France R., Jiang C-S, Romero M. J., J. Crystal Growth, 311 (2009), 1876. http://dx.doi.org/10.1016/j.jcrysgro.2008.09.18410.1016/j.jcrysgro.2008.09.184]Search in Google Scholar
[[4] Lu W. et al., Semicond. Sci. Technol., 24 (2009), 105016. http://dx.doi.org/10.1088/0268-1242/24/10/10501610.1088/0268-1242/24/10/105016]Search in Google Scholar
[[5] Li W., Pessa M., Likonen J., Appl. Phys. Lett., 78 (2001), 2864. http://dx.doi.org/10.1063/1.137054910.1063/1.1370549]Search in Google Scholar
[[6] Albo A., Cytermann C., Bahir G., Fekete D., Appl. Phys. Lett., 96 (2010), 141102. http://dx.doi.org/10.1063/1.336021610.1063/1.3360216]Search in Google Scholar
[[7] Fan W.J. et al., Appl. Phys. Lett., 80 (2002), 4136. http://dx.doi.org/10.1063/1.148391310.1063/1.1483913]Search in Google Scholar
[[8] Leibiger G., Gottschalch V., Schubert M., J. Appl. Phys., 90 (2001), 5951. http://dx.doi.org/10.1063/1.141685910.1063/1.1416859]Search in Google Scholar
[[9] Yang X., Heroux J.B., Jurkovic M.J., Wang W.I., J. Vac. Sci. Technol. B, 17 (1999), 1144. http://dx.doi.org/10.1116/1.59071010.1116/1.590710]Search in Google Scholar
[[10] Seong M. J., Hanna M. C., Mascarenhas A., Appl. Phys. Lett., 79 (2001), 3974. http://dx.doi.org/10.1063/1.142446910.1063/1.1424469]Search in Google Scholar
[[11] Grillo V., Albrecht M., Remmele T., Strunk H. P., Egorov A. Y., Riechert H., Journal Of Applied Physics, 90 (2001), 3792. http://dx.doi.org/10.1063/1.140213910.1063/1.1402139]Search in Google Scholar
[[12] Shan W. et al., Phys. Rev. Lett., 82 (1999), 1221. http://dx.doi.org/10.1103/PhysRevLett.82.122110.1103/PhysRevLett.82.1221]Search in Google Scholar
[[13] Adachi S., Properties of Semiconductor Alloys: Group — IV, III — V and II — VI Semiconductors, John Wiley & Sons, Ltd., 2009. http://dx.doi.org/10.1002/978047074438310.1002/9780470744383]Search in Google Scholar
[[14] Heroux J. B., Yang X., Wang W. I., J. Appl.Phys., 92 (2002), 4361. http://dx.doi.org/10.1063/1.150781710.1063/1.1507817]Search in Google Scholar
[[15] Kudrawiec R. et al., J. Appl.Phys., 97 (2005), 053515. http://dx.doi.org/10.1063/1.185472910.1063/1.1854729]Search in Google Scholar