Open Access

Finite element method simulation of interface evolution during epitaxial growth


Cite

[1] Liu Y.C., Zytkiewicz Z.R., Dost S., J. Crystal Growth, 265 (2004), 241. http://dx.doi.org/10.1016/j.jcrysgro.2004.02.00410.1016/j.jcrysgro.2004.02.004Search in Google Scholar

[2] Nishinaga T., Crystal Properties Prep., 31 (1991), 92. Search in Google Scholar

[3] Khenner M., Braun R.J., Mauk M.G., J. Crystal Growth, 235 (2002), 425. http://dx.doi.org/10.1016/S0022-0248(01)01934-010.1016/S0022-0248(01)01934-0Search in Google Scholar

[4] Khenner M., Braun R.J., Mauk M.G., J. Crystal Growth, 241 (2002), 330. http://dx.doi.org/10.1016/S0022-0248(02)01313-110.1016/S0022-0248(02)01313-1Search in Google Scholar

[5] Zytkiewicz Z.R., J. Crystal Growth, 172 (1996), 259. http://dx.doi.org/10.1016/S0022-0248(96)00713-010.1016/S0022-0248(96)00713-0Search in Google Scholar

[6] Zytkiewicz Z.R., Cryst. Res. Technol., 34 (1999), 573. http://dx.doi.org/10.1002/(SICI)1521-4079(199906)34:5/6<573::AID-CRAT573>3.0.CO;2-010.1002/(SICI)1521-4079(199906)34:5/6<573::AID-CRAT573>3.0.CO;2-0Search in Google Scholar

[7] Dost S., Lent B., Single Crystal Growth of Semiconductors from Metallic Solutions, Elsevier 2007. 10.1016/B978-044452232-0/50005-5Search in Google Scholar

[8] Capper P., Mauk M., LIQUID PHASE EPITAXY OF ELECTRONIC, OPTICAL AND OPTOELECTRONIC MATERIALS, John Willey & Sons, 2007. 10.1002/9780470319505Search in Google Scholar

[9] Zytkiewicz Z.R., Thin Solid Films, 412 (2002), 64. http://dx.doi.org/10.1016/S0040-6090(02)00315-210.1016/S0040-6090(02)00315-2Search in Google Scholar

[10] Kraiem J., Fave A., Kamiń Ski A., Lemiti M., Jozwik I., Olchowik J.M., Proc. 19 th EPSEC, 7–11 June 2004, Paris, France, p. 1158. Search in Google Scholar

[11] Yan Z., Nishinaga S., Nishinaga T., J. Crystal Growth, 209 (2000), 1. http://dx.doi.org/10.1016/S0022-0248(99)00539-410.1016/S0022-0248(99)00539-4Search in Google Scholar

[12] Liu Y.C., Zytkiewicz Z.R, Dost S., J. Crystal Growth, 275 (2005), e953–e957. http://dx.doi.org/10.1016/j.jcrysgro.2004.11.10010.1016/j.jcrysgro.2004.11.100Search in Google Scholar

[13] Kimura M., Djilali N., Dost S., Kanai H., Tanaka A., Sukegawa T., J. Crystal Growth, 167 (1996), 516. http://dx.doi.org/10.1016/0022-0248(96)00268-010.1016/0022-0248(96)00268-0Search in Google Scholar

[14] Chen L.J., Chen L.C., Wan C., Lien C., The Chemical Engineering Journal and the Biochemical Engineering Journal, 62 (1996), 43. http://dx.doi.org/10.1016/0923-0467(95)03052-210.1016/0923-0467(95)03052-2Search in Google Scholar

[15] Kimura M., Djilali N., Dost S., J. Crystal Growth, 143 (1994), 334. http://dx.doi.org/10.1016/0022-0248(94)90074-410.1016/0022-0248(94)90074-4Search in Google Scholar

[16] Jozwik I., Olchowik J.M., Proc. 21st EPSEC, 4-8 September 2006, Dresden, Germany, (CD) p. 1005. Search in Google Scholar

eISSN:
2083-124X
ISSN:
2083-1331
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties