Influence of Bi on dielectric properties of GaAs_1−xBi_x alloys

[1] Tait C.R., Yan L., Millunchick J.M., J. Cryst. Growth, 493 (2018), 20.10.1016/j.jcrysgro.2018.04.026Search in Google Scholar

[2] Mazur Y.I., Dorogan V.G., Dias L., Fan D., Schmidbauer M., Ware M.E., Marques G.E., J. Lumin., 188 (2017), 209.10.1016/j.jlumin.2017.04.025Search in Google Scholar

[3] Erol A., Akalin E., Kara K., Aslan M., Bahrami-Yekta V., Lewis R.B., Tiedje T., J. Alloy. Compd., 722 (2017), 339.10.1016/j.jallcom.2017.06.139Search in Google Scholar

[4] Pettinari G., Polimeni A., Capizzi M., Blokland J.H., Christianen P.C. M., Maan J.C., Tiedje T., Appl. Phys. Lett., 92 (2018), 262105.10.1063/1.2953176Search in Google Scholar

[5] Aleknavičius J., Pozingytė E., Butkutė R., Krotkus A., Tamulaitis G., Lith. J. Phys., 58 (2018), 108.10.3952/physics.v58i1.3656Search in Google Scholar

[6] Achour H., Louhibi S., Amrani B., Tebboune A., Sekkal N., Superlattice. Microst., 44 (2008), 223.10.1016/j.spmi.2008.05.004Open DOISearch in Google Scholar

[7] Richards R.D., Mellor A., Harun F., Cheong J.S., Hylton N.P., Wilson T., David J.P.R., Sol. Energ. Mat. Sol. C., 172 (2017), 238.10.1016/j.solmat.2017.07.029Search in Google Scholar

[8] Pettinari G., Polimeni A., Capizzi M., Engelkamp H., Christianen P., Maan J.C., Tiedje T., Phys. Status Solidi B, 250 (2013), 779.10.1002/pssb.201200463Search in Google Scholar

[9] Pashchenko A.S., Lunin L.S., Chebotarev S.N., Lunina M.L., Semiconductors, 52 (2018), 729.10.1134/S1063782618060180Open DOISearch in Google Scholar

[10] Prados A., Ranchal R., J. Phys. Chem. C, 122 (2018), 8874.10.1021/acs.jpcc.8b01838Search in Google Scholar

[11] Prados A., Ranchal R., J. Phys. Chem. C, 122 (2018), 8886.10.1021/acs.jpcc.7b12263Search in Google Scholar

[12] Xu R., Zhao S., Yang K., Li G., Li T., Li D., Opt. Express, 26 (2018), 8542.10.1364/OE.26.008542Search in Google Scholar

[13] El-Nahass M.M., Attia A.A., Ali H.A.M., Salem G.F., Ismail M.I., J. Electron. Mater., 47 (2018), 1.10.1007/s11664-018-6126-8Search in Google Scholar

[14] Chung C.Y., Chang Y.S., Chen G.J., Chung C.C., Huang T.W., Solid State Commun., 145 (2008), 212.10.1016/j.ssc.2007.10.035Search in Google Scholar

[15] Wu H., Lin Y.B., Gong J.J., Zhang F., Zeng M., Qin M.H., Liu J.M., J. Phys. D Appl. Phys., 46 (2013), 145001.10.1088/0022-3727/46/14/145001Search in Google Scholar

[16] Zhou L., Vilarinho P.M., Baptista J.L., J. Eur. Ceram. Soc., 21 (2001), 531.10.1016/S0955-2219(00)00239-9Search in Google Scholar

[17] Adamczyk M., Ujma Z., Szymczak L., Soszyński A., Koperski J., Mater. Sci. Eng. B-Adv., 136 (2007), 170.Search in Google Scholar

[18] Chai Y.L., His C.S., Lin Y.T., Chang Y.S., J. Alloy. Compd., 588 (2014), 248.10.1016/j.jallcom.2013.11.022Search in Google Scholar

[19] Xu L.F., Qi P.B. Chen S.S., Wang R.L., Yang C.P., Mater. Sci. Eng. B-Adv., 177 (2012), 494.10.1016/j.mseb.2012.02.001Search in Google Scholar

[20] Singh L., Kim I.W., Sin B.C., Ullah A., Woo S.K., Lee Y., Mat. Sci. Semicon. Proc., 31 (2015), 386.Search in Google Scholar

[21] Roy A.K., Prasad K., Prasad A., Process. Appl. Ceram., 7 (2013), 81.10.1016/j.urology.2012.08.08623273083Search in Google Scholar

[22] Liu J., Duan C.G., Yin W.G., Mei W.N., Smith R.W., Hardy J.R., J. Chem. Phys., 119 (2003), 2812.10.1063/1.1587685Search in Google Scholar

[23] Sun S., Chen W., Fang L., Cheng N., Xiao Z., Zhao Z., Lu Y., Ceram. Int., 44 (2018), 9942.10.1016/j.ceramint.2018.03.023Search in Google Scholar

[24] Zangina T., Hassan J., Matori K. A., See A., Alibe I. M., Umar S., J. Aust. Ceram. Soc., 54 (2018), 307.10.1007/s41779-017-0155-2Open DOISearch in Google Scholar

[25] Gondaliya N., Kanchan D.K., Sharma P., Jayswal M.S., Pant M., Integr. Ferroelectr., 119 (2010), 1.10.1080/10584587.2010.489494Search in Google Scholar

[26] Zhi Y., Chen A., Vilarinho P.M., Mantas P.Q., Baptista J.L., J. Eur. Ceram. Soc., 18 (1998), 1621.10.1016/S0955-2219(98)00028-4Search in Google Scholar