Deriving the exchange times for a model of trap-assisted tunnelling

[1] A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, “Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism”, Applied Physics Letters, vol. 70, no. 25, pp. 3407-3409, 1997.Search in Google Scholar

[2] M. Herrmann and A. Schenk, “Field and hightemperature dependence of the long term charge loss in erasable programmable read only memories:Measurements and modeling”, Journal of Applied Physics, vol. 77, no. 9, pp. 4522-4540, 1995.Search in Google Scholar

[3] F. Jim´enez-Molinos, F. G´amiz, A. Palma, P. Cartujo, and J. A. L´opez-Villanueva, “Direct and trap-assisted elastic tunneling through ultrathin gate oxides”, Journal of Applied Physics, vol. 91, no. 8, pp. 5116-5124, 2002.Search in Google Scholar

[4] M. P. Houng, Y. H. Wang, and W. J. Chang, “Current transport mechanism in trapped oxides:A generalized trap-assisted tunneling model”, Journal of Applied Physics, vol. 86, no. 3, pp. 1488-1491, 1999.Search in Google Scholar

[5] D. Ielmini, A. S. Spinelli, M. A. Rigamonti, and A. L. Lacaita, “Modeling of SILC based on electron and hole tunneling I, Transient effects”, IEEE Transactions on Electron Devices, vol. 47, no. 6, pp. 1258-1265, 2000.Search in Google Scholar

[6] D. Ielmini, A. S. Spinelli, M. A. Rigamonti, and A. L. Lacaita, “Modeling of SILC based on electron and hole tunneling II, Steady-state”, IEEE Transactions on Electron Devices, vol. 47, no. 6, pp. 1266-1272, 2000.Search in Google Scholar

[7] D. Ielmini, A. S. Spinelli, A. L. Lacaita, A. Martinelli, and G. Ghidini, “A recombination- and trap-assisted tunneling model for stress-induced leakage current”, Solid-State Electronics, vol. 45, no. 8, pp. 1361-1369, 2001.Search in Google Scholar

[8] D. Ielmini, A. S. Spinelli, A. L. Lacaita, and G. Ghidini, “Modeling of stress-induced leakage current and impact ionization in MOS devices”, Solid-State Electronics, vol. 46, no. 3, pp. 417-422, 2002.10.1016/S0038-1101(01)00114-9Search in Google Scholar

[9] D. Ielmini, A. S. Spinelli, A. L. Lacaita, and A. Modelli, “A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories”, Microelectronic Engineering, vol. 59, no. 1-4, pp. 189-195, 2001.10.1016/S0167-9317(01)00621-9Search in Google Scholar

[10] D. Ielmini, A. S. Spinelli, A. L. Lacaita, and A. Modelli, “Modeling of anomalous SILC in flash memories based on tunneling at multiple defects”, Solid-State Electronics, vol. 46, no. 11, pp. 1749-1756, 2002.Search in Google Scholar

[11] D. M. Sathaiya and S. Karmalkar, “Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaNGaN high electron mobility transistors”, Journal of Applied Physics, vol. 99, no. 9, p. 093701, 2006.Search in Google Scholar

[12] Q. K. Yang, F. Fuchs, J. Schmitz, and W. Pletschen, “Investigation of trap-assisted tunneling current in InAs/(GaIn) Sb superlattice long-wavelength photodiodes”, Applied Physics Letters, vol. 81, no. 25, pp. 4757-4759, 2002.Search in Google Scholar

[13] D. Rosenfeld and G. Bahir, “A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n/sup pmp HgCdTe photodiodes”, IEEE Transactions on Electron Devices, vol. 39, no. 7, pp. 1638-1645, 1992, DOI: 10.1109/16.141229.10.1109/16.141229Search in Google Scholar

[14] M. Zhang, Z. Huo, Z. Yu, J. Liu, and M. Liu, “Unification of three multiphonon trap-assisted tunneling mechanisms”, Journal of Applied Physics, vol. 110, no. 11, p. 114108, 2011.Search in Google Scholar

[15] J. Racko, P. Benko, I. Hotov´y, L. Harmatha, M. Mikol´aˇsek, R. Granzner, M. Kittler, F. Schwierz, and J. Breza, “A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times”, Applied Surface Science, vol. 312, pp. 68-73, 2014.10.1016/j.apsusc.2014.05.065Search in Google Scholar

[16] J. Racko, P. Benko, M. Mikol´aˇsek, R. Granzner, M. Kittler, F. Schwierz, L. Harmatha, and J. Breza, “Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling”, Applied Surface Science, vol. 395, pp. 122-130, 2017.10.1016/j.apsusc.2016.06.120Search in Google Scholar

[17] A. Grove, Physics, and technology of semiconductor devices, N. York, J. Wiley, and Sons, 1967.Search in Google Scholar

[18] D. Schroeder Modelling of interface carrier transport for device simulation, Wien, Springer-Verlag, 2014.Search in Google Scholar

[19] A. Schenk, “A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon”, Solid-State Electronics, vol. 35, no. 11, pp. 1585-1596, 1992.Search in Google Scholar