Graphene prepared on SiC by chemical vapor deposition process at low temperature

[1] U. Starke and C. Riedl, “Epitaxial graphene on SiC(0001) SiC(000-1): from surface reconstructions to carbon electronics”, J.Phys.Condens.Matter, 21 134016, 2009.10.1088/0953-8984/21/13/134016Search in Google Scholar

[2] J. G. Kim, W. S. Kim, Y. H. Kim, C. H. Lim, and D. J. Choi, “Formation of graphene on SiC by chemical vapour deposition with liquid sources”, Surface & Coating Technology, 231,189-192, 2013.10.1016/j.surfcoat.2012.06.066Search in Google Scholar

[3] Y. Hagihara, T. Kajiwara, A. Visikovskiy, and S. Tanaka, “Graphene nanoribbons grown on epitaxial Si_xC_yO_z laxer on vicinal SiC(0001) surfaces by chemical vapour deposition”, Appl.Phys.Express, 6 55102, 2013.10.7567/APEX.6.055102Search in Google Scholar

[4] Q. Liu, C. Yu, Z. He, G. Gu, J. Wang, C. Zhou, J. Guo, Y. Gao, and Z. Feng, “Chemical vapour deposition graphene of gradient growth method on an 4H-SiC(0001) substrate”, Appl.Surf. Sci., 454, 68-73, 2018.10.1016/j.apsusc.2018.05.131Search in Google Scholar

[5] P. Machac, T. Fidler, S. Cichon, and V. Jurka, “Synthesis of graphene on Co/SiC structure”, J.Mater.Sci.Mater.Electron, 24, 3793-3799, 2013.10.1007/s10854-013-1320-1Search in Google Scholar

[6] D. Yang, “Chemical analysis of graphene oxide films after heat chemical treatments by X-ray photoelectron Micro-Raman spectroscopy”, Carbon, 47 145-152, 2009.10.1016/j.carbon.2008.09.045Search in Google Scholar