Open Access

A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics


Cite

[1] T. P. Ma and P. V. Dressendorfer, “Ionizing radiation effects in MOS devices circuits”, 1/E, New York: Wiley-Interscience, 1989.Search in Google Scholar

[2] A. Holmes-Siedle and L. Adams, “Handbook of radiation effects”, 2/E, Oxford: Oxford University Press, 2002.10.1093/oso/9780198507338.001.0001Search in Google Scholar

[3] A. Holmes-Siedle, F. Ravotti, and M. Glaser, “The dosimetric performance of RADFETs in radiation test beams”, Proceedings of IEEE Radiation Effects Data Workshop, pp. 42–57.Search in Google Scholar

[4] G. Sarrabayrouse and S. Siskos, “Behaviour of High Sensitivity MOS Radiation Dosimeters Biased in the MTC Current Region”, Proceedings of the 9th WSEAS Int. Conference on Instrumentation Measurement, Circuits Systems, pp. 38–41, 2010.Search in Google Scholar

[5] A. Haran, A. Jaksic, N. Refach, A. Eliyahu, D. David, and J. Barak, “Temperature Effects Long Term Fading of Implanted Un-Implanted Gate Oxide RADFETs”, Proceedings of the 7th European Conference on Radiation and Its Effects on Components Systems (RADECS), pp. 465–469, 2003.Search in Google Scholar

[6] J. Hofman and R. Sharp, “Measurement Methods for Total Ion-ising Dose Testing: In-Situ versus Standard Practice”, Proceedings of IEEE Radiation Effects Data Workshop, pp. 1–4, 2012.10.1109/REDW.2012.6353723Search in Google Scholar

[7] J. Hofman, A. Holmes-Siedle, R. Sharp, and J. Haze, “A Method for In-situ Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters”, IEEE Trans, Nucl. Sci. vol. 62, no. 6, pp. 2525–2531, Dec 2015.10.1109/TNS.2015.2498948Search in Google Scholar

[8] J. Hofman, A. Jaksic, R. Sharp, N. Vasovic, and J. Haze, “In-Situ Measurement of Total Ionising Dose Induced Changes in Threshold Voltage Temperature Coefficients of RADFETs”, IEEE Trans, Nucl, Sci. vol. 64, no. 1, pp. 582-586, 2017.10.1109/TNS.2016.2630275Search in Google Scholar

[9] J. Hofman, R. Sharp, and J. Haze, “TID In-Situ Measurement of Temperature Coefficient of Various Commercial Voltage References”, Proceedings of 17th European Conference on Radiation and Its Effects on Components Systems (RADECS), pp. 1–4, 2017.10.1109/RADECS.2017.8696249Search in Google Scholar

[10] Temperature Test Chambers TempEvent Brochure, 3/E, Balingen: Weiss Umwelttechnik 2017.Search in Google Scholar

[11] Test method standard microcircuits MIL-STD-883J TM 1019.9, 9/E, Washington DC: US Department of Defence, 2013.Search in Google Scholar

[12] ThermalAir TA-5000 Brochure, 1/E, New York: MPI Thermal, 2017.Search in Google Scholar

[13] D. M. Rowe, “CRC Handbook of Thermoelectrics”, 1/E, Boca Raton: CRC Press 1995.Search in Google Scholar

[14] J. Scholz and T. Ricolfi, “Sensors, A Comprehensive Survey”, vol. 4 Thermal Sensors, 2/E, New York: VCH Publishers, 2008.Search in Google Scholar

[15] M. Gonzlez-Guerrero, M. T.Álvarez, J. J. Jiménez, J. Sánchez -Páramo, and H. Guerrero, “The e ect of proton gamma radiation on di erent types of temperature sensors”, Proceedings of European Conference on Radiation and Its Effects on Components Systems (RADECS), pp. 41-45, 2009.10.1109/RADECS.2009.5994550Search in Google Scholar

[16] ADS1248 24-Bit Analog-to-Digital Converters for Temperature Sensors, 2/E, Dallas: Texas Intruments, 2011.Search in Google Scholar

[17] J. Hofman, “In-situ, low dose rate, total ionising dose test of the cooling performance of a thermoelectric module”, Proceedings of 14th European Conference on Radiation and Its Effects on Components Systems (RADECS), pp. 1–4, 2013.10.1109/RADECS.2013.6937397Search in Google Scholar

[18] P. Balda and M. Schlegel, “Advanced PID Control Algorithms Built into the REX Control System”, IFAC Proc. vol. 45, no. 3, pp. 465–470, 2012.10.3182/20120328-3-IT-3014.00079Search in Google Scholar

[19] J. Hofman, “Photovoltaic Panels Efficiency Measurement System”, Master thesis 1/E, Brno: BUT Department of Microlelectronics, 2010.Search in Google Scholar

[20] K. Instruments and A. Road, “Model DMM7510 7-1/2 Digit Gq raphical Sampling Multimeter Specifications”, pp. 1–28, Nov. q 2014.Search in Google Scholar

[21] “User’s manual FLIR T650 series”, 2/E, New York: FLIR Systems, 2017.Search in Google Scholar

[22] “ZVP1320F Datasheet”, 4/E, Plano: Diodes Incorporated, 2012.Search in Google Scholar

[23] “LT1236 Precision Reference”, 1/E, Milpitas: Linear Technology, 1995.Search in Google Scholar

[24] “ADR440 Ultralow Noise, LDO XFET Voltage References with Current Sink and Source”, 5/E, Norwood: Analog Devices, 2010.Search in Google Scholar

[25] “LT1460 Micropower Precision Series Reference Family”, 3/E, Milpitas: Linear Technology, 2006.Search in Google Scholar

[26] “ADR03 Ultracompact, Precision 2.5 V Voltage Reference”, 18/E, Norwood: Analog Devices, 2012,.Search in Google Scholar

[27] J. Hofman, R. Sharp, and J. Haze, “In-Situ Measurement of Total Ionising Dose Induced Degradation of Various Commercial Voltage References”, in Proceedings of 16th European Conference on Radiation Its Effects on Components Systems (RADECS), pp. 1–4, 2016.10.1109/RADECS.2016.8093206Search in Google Scholar

[28] “LM4050QML Precision Micropower Shunt Voltage Reference”, 7/E, Texas Instruments, 2013.Search in Google Scholar

eISSN:
1339-309X
Language:
English
Publication timeframe:
6 times per year
Journal Subjects:
Engineering, Introductions and Overviews, other