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Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface


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1. Borkovska O.Y, Dmitruk P.L., Litovchenko V.H. (1984), Effect of radiation ordering in heterojunctions of (n-Si)-(p-GaP), Semiconductors, 18(10), 1808-1810.Search in Google Scholar

2. Mahkamov S., Tursunov N.A., Ashurov M. (1999), About the peculiarities of formation of radiation defects in silicon structures, Technical Physics, 69(1), 121-123.10.1134/1.1259262Search in Google Scholar

3. Nikolaev D.V., Antonova I.V., Naumova O.V. (2003), Charge accumulation in oxide and interface states of silicon-on-insulator structures after irradiation by electrons and γ-rays, Semiconductors, 37(4), 443-449.10.1134/1.1568462Open DOISearch in Google Scholar

4. Marchenko I.G., Zhdanovich N.E. (2010), Influence of irradiation by electrons on the electrical parameters of silicon p-n-structures, weakened by aluminum screens, Technical Physics, 36(10), 45-51.10.1134/S1063785010050226Search in Google Scholar

5. Kalinina E.V., Kossov V.G., Yafaev R. R. (2010), High-temperature radiation-strong rectifier based on 4H-SiC alumimium ion implanted p+-n-junctions, Semiconductors, 44(6), 807-815.10.1134/S1063782610060151Open DOISearch in Google Scholar

6. Dolgolenko A.P., Litovchenko P.G., Varentsov M.D. (2006), Particularities of the formation of radiation defects in silicon with low and high concentration of oxygen, Physica Status Solidi, 243(8), 1842-1852.10.1002/pssb.200541074Search in Google Scholar

7. Makara V.A., Vasiliev M.A., Steblenko L.P. (2008), Caused by magnetic field changes of impurity composition and microhardness of silicon crystals, Semiconductors, 42(9), 1061-1064.10.1134/S106378260809008XOpen DOISearch in Google Scholar

8. Skvortsov A.A., Orlov A.M., Solov’ev A.A. (2009), Magnetoplastic effect in silicon: the search for new methods of management of structure-sensitive properties of elemental semiconductors, Physics of the Solid State, 51(12), 2304-2308.10.1134/S1063783409120038Search in Google Scholar

9. Mudriy S.I., Kulyk Y.O., Steblenko L.P. (2010), Change of internal stress and lattice parameter of silicon crystals, stimulated by the combined influence of X-ray irradiation and a magnetic field, Physics and Chemistry of Solid State, 11(2), 334-337.Search in Google Scholar

10. Slobodzyan D.P., Pavlyk B.V., Kushlyk M.O. (2015), Features of influence of x-radiation and magnetic field on the electrical characteristics of barrier structures based on p-si with dislocation, designed for solar energy, J. Nano- Electron. Phys., 7(4), 04051-1 - 04051-5.Search in Google Scholar

11. Peka G.P., Strіkha V.І. (1992), Surface and contact phenomena in semiconductors, Kyiv, Lybid.Search in Google Scholar

12. Pavlyk B.V., Slobodzyan D.P., Kushlyk M.O. (2012), Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures, Semicondu-ctors, 46(8), 1017-1021.10.1134/S1063782612080167Search in Google Scholar

13. Pavlyk B.V., Slobodzyan D.P., Kushlyk M.O. (2013), Electro-physical characteristics of near-surface layers in p-si crystals with sputtered al films and subjected to elastic deformation, Ukr. J. Phys., 58(8), 742-747.10.15407/ujpe58.08.0742Search in Google Scholar