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Materials Science-Poland
Volume 36 (2018): Issue 2 (June 2018)
Open Access
High Pressure Raman Study of Layered Semiconductor Tlgase
2
S.H. Jabarov
S.H. Jabarov
,
V.B. Aliyeva
V.B. Aliyeva
,
T.G. Mammadov
T.G. Mammadov
,
A.I. Mammadov
A.I. Mammadov
,
S.E. Kichanov
S.E. Kichanov
,
L.S. Dubrovinsky
L.S. Dubrovinsky
,
S.S. Babayev
S.S. Babayev
,
E.G. Pashayeva
E.G. Pashayeva
and
N.T. Dang
N.T. Dang
| Jun 25, 2018
Materials Science-Poland
Volume 36 (2018): Issue 2 (June 2018)
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Published Online:
Jun 25, 2018
Page range:
203 - 208
Received:
Jul 18, 2017
Accepted:
Mar 15, 2018
DOI:
https://doi.org/10.1515/msp-2018-0040
Keywords
layered semiconductor
,
high pressure
,
Raman study
© 2018 S.H. Jabarov et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.